Record link: 
http://hdl.handle.net/20.500.12708/27589
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Title: 
Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins
en
Citation: 
Osintsev, D., Makarov, A., Sverdlov, V., & Selberherr, S. (2012). Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins. In I. Lirkov, S. Margenov, & J. Waśniewski (Eds.), Large-Scale Scientific Computing: 8th International Conference, LSSC 2011 (pp. 630–637). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-642-29843-1_72
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Publisher DOI: 
10.1007/978-3-642-29843-1_72
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Publication Type: 
Inproceedings - Full-Paper Contribution
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Language: 
English
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Authors: 
Osintsev, D. 
Makarov, A. 
Sverdlov, V. 
Selberherr, S. 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Published in: 
Large-Scale Scientific Computing: 8th International Conference, LSSC 2011 
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ISBN: 
978-3-642-29843-1
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Volume: 
7116
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DOI of the book: 
10.1007/978-3-642-29843-1
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Date (published): 
2012
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Event name: 
8th International Conference on Large-Scale Scientific Computing, LSSC 2011 
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Event date: 
6-Jun-2011 - 10-Jun-2011
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Event place: 
Sozopol, Bulgaria
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Number of Pages: 
8
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Publisher: 
Springer Berlin Heidelberg
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Publisher: 
Springer Verlag, Heidelberg
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Science Branch: 
Elektrotechnik, Elektronik
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Appears in Collections:
Conference Paper

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