Institut für Mikroelektronik

Organization Name (de) Name der Organisation (de)
E360 - Institut für Mikroelektronik
 
Code Kennzahl
E360
 
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Institute
Parent OrgUnit Übergeordnete Organisation
 
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PreviewAuthor(s)TitleTypeIssue Date
1Ghosh-2025-Microelectronic Engineering-vor.pdf.jpgGhosh, Rittik ; Provias, Alexandros ; Karl, Alexander ; Wilhelmer, Christoph ; Knobloch, Theresia ; Davoudi, Mohammad Rasool ; Sattari Esfahlan, Seyedmahdi ; Waldhör, Dominic ; Grasser, Tibor Theoretical insights into the impact of border and interface traps on hysteresis in monolayer MoS₂ FETsArticle Artikel 15-Sep-2025
2Saleh, A.S. ; Croes, K. ; Ceric, Hajdin ; De Wolf, I. ; Zahedmanesh, H. Novel concept-oriented synthetic data approach for training generative AI-Driven crystal grain analysis using diffusion modelArticle Artikel Mar-2025
3Cerdeira, Antonio ; Estrada, Magali ; Mounir, Ahmed ; Grasser, Tibor ; Iniguez, Benjamin Analysis of the mobility behavior of MOS₂ 2D FETsArticle Artikel Feb-2025
4Borghi-2025-Applied Surface Science-vor.pdf.jpgBorghi, Mauro ; Giovanelli, Giulia ; Montecchi, Monica ; Capelli, Raffaella ; Mescola, Andrea ; Paolicelli, Guido ; D’Addato, Sergio ; Grasser, Tibor ; Pasquali, Luca Comprehensive study of SrF₂ growth on highly oriented pyrolytic graphite (HOPG): Temperature-dependent van der Waals epitaxyArticle Artikel 30-Jan-2025
5Speckmann-2024-Advanced Materials Interfaces-vor.pdf.jpgSpeckmann, Carsten ; Angeletti, Andrea ; Kývala, Lukáš ; Lamprecht, David ; Herterich, Felix ; Mangler, Clemens ; Filipovic, Lado ; Dellago, Christoph ; Franchini, Cesare ; Kotakoski, Jani Electron‐Beam‐Induced Adatom‐Vacancy‐Complexes in Mono‐ and Bilayer PhosphoreneArticle Artikel 13-Jan-2025
6Bendra-2024-Solid-State Electronics-vor.pdf.jpgBendra, Mario ; Lacerda de Orio, Roberto ; Selberherr, Siegfried ; Wolfgang Goes ; Sverdlov, Viktor A multi-level cell for ultra-scaled STT-MRAM realized by back-hoppingArticle Artikel Jan-2025
7Hu, Ziyi ; Li, Junjie ; Chen, Rui ; Shang, Dashan ; Wei, Yayi ; Wang, Zhongrui ; Li, Ling ; Filipovic, Lado A Two-Step Dry Etching Model for Non-Uniform Etching Profile in Gate-All-Around Field-Effect Transistor ManufacturingArticle Artikel 19-Dec-2024
8Faber-2024-Journal of Physical Chemistry Letters-vor.pdf.jpgFaber, T ; Filipovic, L ; Koster, L J A The Hot Phonon Bottleneck Effect in Metal Halide PerovskitesArticle Artikel 16-Dec-2024
9Ravichandran, Harikrishnan ; Knobloch, Theresia ; Subbulakshmi Radhakrishnan, Shiva ; Wilhelmer, Christoph ; Stepanoff, Sergei ; Stampfer, Bernhard ; Ghosh, Subir ; Oberoi, Aaryan ; Waldhoer, Dominic ; Chen, Chen ; Redwing, Joan M. ; Wolfe, Douglas E. ; Grasser, Tibor ; Das, Saptarshi A stochastic encoder using point defects in two-dimensional materialsArticle Artikel 4-Dec-2024
10Franckel, Mathilde L.D. ; Turiansky, Mark E. ; Waldhör, Dominic ; Van De Walle, Chris G. First-principles study of proton migration in indium oxideArticle Artikel 1-Dec-2024
11Jørstad, Nils Petter ; Pruckner, Bernhard ; Goes, W. ; Selberherr, Siegfried ; Sverdlov, Viktor Magnetic Field Free SOT-MRAM SwitchingInproceedings KonferenzbeitragDec-2024
12Cvitkovich, Lukas ; Stano, Peter ; Wilhelmer, Christoph ; Waldhör, Dominic ; Loss, Daniel ; Niquet, Yann Michel ; Grasser, Tibor Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubitsArticle Artikel Dec-2024
13Shao, Hua ; Reiter, Tobias ; Chen, Rui ; Li, Junjie ; Hu, Ziyi ; Wei, Yayi ; Li, Ling ; Filipovic, Lado Loading Effect during SiGe/Si Stack Selective Isotropic Etching for Gate-All-Around TransistorsArticle Artikel 26-Nov-2024
14Saleh, Ahmed Sobhi ; Croes, Kristof ; Ceric, Hajdin ; De Wolf, Ingrid ; Zahedmanesh, Houman A Comprehensive Microstructure-Aware Electromigration Modeling Framework; Investigation of the Impact of Trench Dimensions in Damascene Copper InterconnectsArticle Artikel 16-Nov-2024
15Stephanie, Margareta Vania ; Pham, Lam ; Schindler, Alexander ; Grasser, Tibor ; Waltl, Michael ; Schrenk, Bernhard Photonic Neuron With on Frequency-Domain ReLU Activation FunctionArticle Artikel 15-Nov-2024
16Propst-2024-Scientific Reports-vor.pdf.jpgPropst, Diana ; Joudi, Wael ; Längle, Manuel ; Madsen, Jacob ; Kofler, Clara ; Mayer, Barbara ; Lamprecht, David ; Mangler, Clemens ; Filipovic, Lado ; Susi, Toma ; Kotakoski, Jani Automated image acquisition and analysis of graphene and hexagonal boron nitride from pristine to highly defective and amorphous structuresArticle Artikel 6-Nov-2024
17Patoary, Naim Hossain ; Mamun, Fahad Al ; Xie, Jing ; Grasser, Tibor ; Sanchez Esqueda, Ivan Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS₂ FETsArticle Artikel Nov-2024
18Gentles, Angus ; Dehghani, Mohammad ; Minixhofer, Rainer ; Khakbaz, Pedram ; Waldhor, Dominic ; Waltl, Michael Modeling Next Generation Sensor Chips: Towards Predictive Band Structure Models for Quarternary III-V Semiconductor AlloysInproceedings Konferenzbeitrag 31-Oct-2024
19Cvitkovich-2024-Journal of Chemical Physics-vor.pdf.jpgCvitkovich, Lukas ; Fehringer, Franz ; Wilhelmer, Christoph ; Milardovich, Diego ; Waldhör, Dominic ; Grasser, Tibor Machine learning force field for thermal oxidation of siliconArticle Artikel 14-Oct-2024
20Shen, Yaqing ; Zhu, Kaichen ; Xiao, Yiping ; Waldhör, Dominic ; Basher Yassin, Abdulrahman H. ; Knobloch, Theresia ; Pazos, Sebastian ; Liang, Xianhu ; Zheng, Wenwen ; Yuan, Yue ; Roldan, Juan B. ; Schwingenschlögl, Udo ; Tian, He ; Wu, Huaqiang ; Schranghamer, Thomas F. ; Trainor, Nicholas ; Redwing, Joan M. ; Das, Saptarshi ; Grasser, Tibor ; Lanza, Mario Two-dimensional-materials-based transistors using hexagonal boron nitride dielectrics and metal gate electrodes with high cohesive energyArticle Artikel Oct-2024