Forschungsbereich Mikroelektronik

Organization Name (de) Name der Organisation (de)
E360-01 - Forschungsbereich Mikroelektronik
 
Code Kennzahl
E360-01
 
Type of Organization Organisationstyp
Research Division
Parent OrgUnit Übergeordnete Organisation
 
Active Aktiv
 


Results 1-100 of 316 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Ballicchia-2026-Annals of Physics-vor.pdf.jpgBallicchia, Mauro ; Etl, Clemens ; Nedjalkov, Mihail ; Ferry, David K. ; Kosina, Hans ; Weinbub, Josef Approximate Wigner approach to Coulomb entanglementArticle Artikel Apr-2026
2Loesener, Martin E.M. ; Zinsler, Tobias Ewald ; Stampfer, Bernhard ; Wimmer, Florian ; Ioannidis , Eleftherios ; Pflanzl, Walter ; Minixhofer, Rainer ; Grasser, Tibor ; Waltl, Michael Evaluation of the robustness of the defect-centric model for defect parameter extraction from RTN and BTI analysis using ComphyArticle Artikel 1-Mar-2026
3Hadámek, Tomáš ; Sverdlov, Viktor Temperature modeling and pulse shaping strategies for energy optimization in 2T-SOT-MRAMArticle Artikel Feb-2026
4Sverdlov, Viktor ; Jørstad, Nils Petter ; Pruckner, Bernhard ; Bendra, Mario ; Goes, Wolfgang ; Selberherr, Siegfried Emerging Magnetoresistive MemoriesInproceedings Konferenzbeitrag19-Jan-2026
5Panarella, L. ; Kaczer, B. ; Smets, Q. ; Nuytten, T. ; Van Troeye, B. ; Tyaginov, S. ; Saraza-Canflanca, P. ; Grasser, Tibor ; Lockhart de la Rosa, C. ; Kar, G. S. ; Afanas'ev, V. Impact of doping and channel inhomogeneities on the stability of industrially fabricated WS₂ FETsArticle Artikel 12-Jan-2026
6Bendra-2026-Microelectronic Engineering-vor.pdf.jpgBendra, M. ; Goes, W. ; Selberherr, S. ; Sverdlov, V. Simulation of SAF-enhanced multilayered STT-MRAM structuresArticle Artikel 11-Jan-2026
7Karl, Alexander ; Verdianu, Axel ; Waldhoer, Dominic ; Knobloch, Theresia ; Kurzweil, Joël ; Bahrami, Mina ; Davoudi, Mohammad Rasool ; Khakbaz, Pedram ; Stampfer, Bernhard ; Sattari-Esfahlan, Seyed Mehdi ; Illarionov, Yury ; Nazir, Aftab ; Liu, Changze ; Zheng, Yu ; Pettorosso, Lorenzo ; Polyushkin, Dmitry ; Müller, Thomas ; Das, Saptarshi ; Wang, Xiao Renshaw ; Tang, Junchuan ; Zhang, Yichi ; Tan, Congwei ; Li, Ye ; Peng, Hailin ; Waltl, Michael ; Grasser, Tibor A standardized approach to characterize hysteresis in 2D-materials-based transistors for stability benchmarking and performance projectionArticle Artikel 7-Jan-2026
8Etl-2026-Physics Letters A-vor.pdf.jpgEtl, Clemens ; Ballicchia, Mauro ; Nedjalkov, Mihail ; Kosina, Hans Gauge-invariant Wigner equation for electromagnetic fields:Strong and weak formulationArticle Artikel 5-Jan-2026
9Bui, Thuy An ; Lamprecht, David ; Madsen, Jacob ; Kurpas, Marcin ; Kotrusz, Peter ; Markevich, Alexander ; Mangler, Clemens ; Kotakoski, Jani ; Filipovic, Lado ; Meyer, Jannik C ; Pennycook, Timothy J ; Skákalová, Viera ; Mustonen, Kimmo Hexatic phase in covalent two-dimensional silver iodideArticle Artikel 4-Dec-2025
10Mounir, Ahmed ; Lime, Francois ; Kloes, Alexander ; Provias, Alexandros ; Knobloch, Theresia ; O'Brien, K. P. ; Grasser, Tibor ; Iniguez, Benjamin Compact I-V Model for Double-Gated MoS₂ FETs Including Short-Channel EffectsArticle Artikel Dec-2025
11Reiter-2025-SoftwareX-vor.pdf.jpgReiter, Tobias ; Filipovic, Lado ViennaPS: A flexible framework for semiconductor process simulationArticle Artikel Dec-2025
12Gull, Josef ; Kosina, Hans Electron-Electron Scattering in Monte Carlo-based Device SimulationsInproceedings KonferenzbeitragDec-2025
13Hung-2025-IEEE Electron Device Letters-vor.pdf.jpgHung, Lee-Chi ; Stanojević, Zlatan ; Schanovsky, Franz ; Kosina, Hans ; Karner, Markus On-current degradation in ultra-scaled nanosheet FETs with S/D underlap dopingArticle Artikel Dec-2025
14Pruckner-2025-Microelectronic Engineering-vor.pdf.jpgPruckner, Bernhard ; Jørstad, Nils Petter ; Goes, Wolfgang ; Selberherr, Siegfried ; Sverdlov, Viktor Field-free magnetization switching in SOT-MRAM devices with noncollinear antiferromagnetsArticle Artikel 15-Nov-2025
15Sverdlov, Viktor ; Pruckner, Bernhard ; Jørstad, Nils Petter ; Bendra, Mario ; Selberherr, Siegfried ; Goes, Wolfgang Modeling Advanced Magnetoresistive MemoriesInproceedings Konferenzbeitrag 5-Nov-2025
16Jørstad, Nils Petter ; Pruckner, Bernhard ; Goes, Wolfgang ; Selberherr, Siegfried ; Sverdlov, Viktor Spin currents and torques in ferromagnetic systems with strong interfacial spin-orbit couplingArticle Artikel 5-Nov-2025
17Bendra-2025-Solid-State Electronics-vor.pdf.jpgBendra, M. ; de Orio, L.R. ; Selberherr, S. ; Goes, W. ; Sverdlov, V. Interlayer exchange coupling for enhanced performance in spin-transfer torque MRAM devicesArticle Artikel Nov-2025
18Stella, Robert ; Leroch, Sabine ; Reiter, Tobias ; Hössinger, Andreas ; Filipovic, Lado Physics-Based Multi-Scale Modeling of Angled Reactive Ion EtchingInproceedings Konferenzbeitrag 28-Oct-2025
19Ghosh, Rittik ; Provias, Alexandros ; Karl, Alexander ; Chaudhuri, Rajarshi Roy ; Waldhör, Dominic ; Knobloch, Theresia ; Wilhelmer, Christoph ; Grasser, Tibor Unveiling Fast Interface Trap Dynamics in Monolayer MoS₂ FETsInproceedings Konferenzbeitrag 28-Oct-2025
20Gull, Josef ; Filipovic, Lado ; Kosina, Hans Accurate Carrier Dynamics for a Kane Dispersion RelationInproceedings Konferenzbeitrag 28-Oct-2025
21Hu, Ziyi ; Junjie Li ; Shao, Hua ; Chen, Rui ; Filipovic, Lado ; Li, Ling Physics-Informed Bayesian Optimization Framework for Etching Rate and Surface Roughness Co-OptimizationInproceedings Konferenzbeitrag 28-Oct-2025
22Kostal, Roman ; Reiter, Tobias ; Filipovic, Lado A New Module for Automated Optimization of Process TCAD Model ParametersInproceedings Konferenzbeitrag 28-Oct-2025
23Reiter, Tobias ; Toifl, Alexander ; Hossinger, Andreas ; Filipovic, Lado Simulation of a Polymer-Free Drie Process Using SF₆/O₂ Plasma EtchingInproceedings Konferenzbeitrag 28-Oct-2025
24HosseinpourRokni, Mohsen ; Zeighami, Niloofar ; Kowsari, Elaheh ; Pourfath, Mahdi ; Tafreshi, Saeedeh S. ; de Leeuw, Nora H. ; Faramarz, Mohmmad Arif Submolecular insights into the adsorption mechanism of imidazolium-based corrosion inhibitors: A novel quantum parameter for predicting inhibition superiorityArticle Artikel 15-Oct-2025
25Jrstad-2025-Solid-State Electronics-vor.pdf.jpgJørstad, Nils Petter ; Goes, Wolfgang ; Selberherr, Siegfried ; Sverdlov, Viktor Optimizing unconventional trilayer SOTs for field-free switchingArticle Artikel Oct-2025
26Waldhör, Dominic ; Karl, Alexander ; Verdianu, Axel ; Bahrami, Mina ; Knobloch, Theresia ; Grasser, Tibor Insights from Hysteresis Analysis in 2D MOSFETsPresentation VortragOct-2025
27Waldhör, Dominic Unveiling Defects at the Semiconductor/Oxide Interface: A Multiscale Modeling ApproachPresentation VortragOct-2025
28Hu, Ziyi ; Lai, Panpan ; Ge, Rui ; Shao, Hua ; Zhai, Yuxuan ; Tong, Yu-Kai ; Feng, Zemeng ; Shang, Dashan ; Li, Junjie ; Chen, Rui ; Filipovic, Lado Improvement of Selective Quasi Atomic Layer Etching of SiGe/Si by Plasma Surface Modification for Fishbone FET FabricationArticle Artikel 18-Sep-2025
29Ghosh-2025-Microelectronic Engineering-vor.pdf.jpgGhosh, Rittik ; Provias, Alexandros ; Karl, Alexander ; Wilhelmer, Christoph ; Knobloch, Theresia ; Davoudi, Mohammad Rasool ; Sattari Esfahlan, Seyedmahdi ; Waldhör, Dominic ; Grasser, Tibor Theoretical insights into the impact of border and interface traps on hysteresis in monolayer MoS₂ FETsArticle Artikel 15-Sep-2025
30Waldhör, Dominic ; Feil, Maximilian ; Grasser, Tibor Optical spectroscopy of interfacial point defects via electrically stimulated recombination in fully processed silicon carbide power MOSFETsPresentation VortragSep-2025
31Wilhelmer-2025-Physical Review Materials-vor.pdf.jpgWilhelmer, Christoph ; Turiansky, Mark E. ; Waldhör, Dominic ; Cvitkovich, Lukas ; Van de Walle, Chris G. ; Grasser, Tibor Optical properties of vacancies in aluminum oxide (α−Al₃O₃) from first principlesArticle Artikel Sep-2025
32MoradiFotouhi-2025-Nanoscale Advances-vor.pdf.jpgMoradiFotouhi, Amir ; Pourfath, Mahdi Sensitive terahertz plasmonic metasurface biosensor integrated with microfluidicsArticle Artikel 7-Aug-2025
33Mounir, Ahmed ; Lime, François ; Kloes, Alexander ; Provias, Alexandros ; Knobloch, Theresia ; O'Brien, K.P. ; Grasser, Tibor ; Iñiguez, Benjamin A Physics-Based Compact I-V Model for Short-Channel MoS₂ FETsInproceedings Konferenzbeitrag 5-Aug-2025
34Waldhör, Dominic ; Turiansky, Mark ; Lee, woncheol ; Van De Walle, Chris G. ; Grasser, Tibor First-Principles Analysis of Hole-Induced Si-H Bond Dissociation in Silicon DioxidePresentation VortragAug-2025
35Zahedmanesh, Houman ; Delie, Gilles ; Asif A. Shah ; Ceric, Hajdin ; Shrivastava, Mayank ; Park, Seongho ; Tokei, Zsolt Thermally-Induced Morphology Changes in Subtractive Ru Lines and Their MitigationInproceedings Konferenzbeitrag 16-Jul-2025
36Saleh, A. S. ; Croes, K. ; Ceric, Hajdin ; De Wolf, I. ; Zahedmanesh, H. AI-driven variability-aware physics-based EM simulation framework for jmax estimationInproceedings Konferenzbeitrag 16-Jul-2025
37Shobeyrian-2025-ACS Applied Energy Materials-vor.pdf.jpgShobeyrian, Forough ; Soleimani, Maryam ; Shojaei, Fazel ; Lashani Zand, Ali ; Pourfath, Mahdi Computational screening of 2D heterostructures for efficient photocatalytic water splittingArticle Artikel 14-Jul-2025
38Bahrami, Mina ; Knobloch, Theresia ; Khakbaz, Pedram ; Davoudi, Mohammad Rasool ; Karl, Alexander ; Sattari-Esfahlan, Seyed Mehdi ; Waldhoer, Dominic ; Grasser, Tibor Evaluation of Insulator Candidates for Nanoelectronics Based on 2D MaterialsInproceedings Konferenzbeitrag 30-Jun-2025
39Waltl, Michael ; Stampfer, Bernhard ; Lacerda de Orio, Roberto Impact of Charge Trapping at Defects on the Robustness of Electronic CircuitsInproceedings Konferenzbeitrag 30-Jun-2025
40Kostal, Roman ; Reiter, Tobias ; Manstetten, Paul ; Filipovic, Lado Novel Approaches to Objective Function Design for Optimizing Process TCAD Model ParametersPresentation Vortrag26-Jun-2025
41Waltl, Michael ; Grasser, Tibor Computer processors built from 2D materialsArticle Artikel 11-Jun-2025
42Salzmann, Josef Distributed Locally Synchronous Grid Oscillator via Perpetual Token ExchangeInproceedings Konferenzbeitrag 5-Jun-2025
43Rasouli, Saeed ; Diebold, Ulrike ; Schmid, Michael ; Grasser, Tibor ; Nazzari, Daniele ; Weber, Walter Michael ; Sokolović, Igor Growth Mechanisms of CaF₂ Thin Films on Cu SurfacesPresentation Vortrag3-Jun-2025
44Giovanelli-2025-Surfaces-vor.pdf.jpgGiovanelli, Giulia ; Borghi, Mauro ; Lodi, Alessandro ; Grasser, Tibor ; Pasquali, Luca Thin epitaxial ionic fluoride films for electronics applicationsArticle Artikel Jun-2025
45Jorstad-2025-IEEE Transactions on Magnetics-vor.pdf.jpgJørstad, Nils Petter ; Goes, Wolfgang ; Selberherr, Siegfried ; Sverdlov, Viktor Modeling torques in systems with spin-orbit couplingArticle Artikel Jun-2025
46Bendra, Mario ; Selberherr, Siegfried ; Wolfgang Goes ; Sverdlov, Viktor Enhancing Sub-Nanosecond Magnetic Tunnel Junctions with Double Spin Torque and Synthetic Antiferromagnetic LayersPresentation Vortrag27-May-2025
47Pruckner, Bernhard ; Goes, Wolfgang ; Selberherr, Siegfried ; Sverdlov, Viktor Switching of Magnetization in Strained Noncollinear Antiferromagnet Mn3SnInproceedings Konferenzbeitrag25-May-2025
48Filipovic, Lado ; Baranowski, Izak ; Faber, Tim ; Nedjalkov, Mihail ; Koster, L J A ; Vasileska, Dragica ; Goodnick, Stephen Theoretical Insights into Next-Generation Hot Carrier Solar CellsInproceedings Konferenzbeitrag 22-May-2025
49Salzmann, Josef ; Schmid, Ulrich Signal Prediction for Digital Circuits by Sigmoidal Approximations Using Neural NetworksInproceedings Konferenzbeitrag 21-May-2025
50Ballicchia, Mauro ; Nedialkov, Mihail Hristov ; Ferry, David Keane ; Etl, Clemens ; Kosina, Hans Approximate Models of Coulomb-Wigner PotentialPresentation Vortrag20-May-2025
51Ruch, Bernhard ; Chaudhuri, Rajarshi Roy ; Butej, Boris ; Gomes, Joao ; Stabentheiner, Manuel ; Reiser, Korbinian ; Koller, Christian ; Pogany, Dionyz ; Ostermaier, Clemens ; Waltl, Michael Evidence for 2D Hole Gas in GaN Gate Injection Transistors and its Role in RDson RecoveryInproceedings Konferenzbeitrag 15-May-2025
52Ceric, Hajdin Electromigration in Gold: Challenges and Possibilities (Invited)Inproceedings Konferenzbeitrag 15-May-2025
53Marcuzzi, A. ; Avramenko, M. ; De Santi, C. ; Moens, P. ; Gomez Garcia, G.J. ; Feng, Ang ; Grasser, Tibor ; Meneghesso, G. ; Zanoni, E. ; Meneghini, M. Recombination-Driven Interface Trap Generation in SiC MOSFETs Under Constant Voltage and Constant Current StressInproceedings Konferenzbeitrag 15-May-2025
54Stampfl, Felix Johann ; Godfrin, C. ; Kubicek, S. ; Baudot, S. ; Raes, B. ; De Greve, K. ; Grill, A. ; Waltl, Michael CV Characterization of Si/SiGe Heterostructures at Cryo TemperaturesInproceedings Konferenzbeitrag 15-May-2025
55Pruckner, Bernhard ; Goes, Wolfgang ; Selberherr, Siegfried ; Sverdlov, Viktor Electrically controlled switching of the magnetic orientation in Mn3Sn and CoFeBInproceedings Konferenzbeitrag14-May-2025
56Reiter, Tobias ; Manstetten, Paul ; Filipovic, Lado GPU-based Monte Carlo Ray Tracing for Flux Calculation in Process SimulationInproceedings Konferenzbeitrag May-2025
57Waltl, Michael ; Tselios, Konstantinos ; Knobloch, Theresia ; Waldhör, Dominic ; Enichlmair , Hubert ; Ioannidis, Eleftherios G. ; Minixhofer , Rainer ; Grasser, Tibor Evaluation of the impact of body bias on the threshold voltage drift of planar SiO₂ transistorsArticle Artikel May-2025
58Sattari-Esfahlan-2025-ACS Nano-vor.pdf.jpgSattari-Esfahlan, Seyed Mehdi ; Yang, Allen Jian ; Ghosh, Rittik ; Zheng, Wenwen ; Rzepa, Gerhard ; Knobloch, Theresia ; Lanza, Mario ; Renshaw Wang, Xiao ; Grasser, Tibor Stability and Reliability of van der Waals High-κ SrTiO3 Field-Effect Transistors with Small HysteresisArticle Artikel 1-Apr-2025
59Fuchsberger, A. ; Verdianu, A. ; Wind, L. ; Nazzari, D. ; Prado Navarrete, Enrique ; Wilfingseder, C ; Aberl, J. ; Brehm, M. ; Hartmann, J-M. ; Sistani, M. ; Weber, W. M. Electrostatic gating in Ge-based reconfigurable field-effect transistorsArticle Artikel Apr-2025
60Lobanova, E. ; Dorogov, M. ; Fedorov, V. ; Grasser, Tibor ; Illarionov, Y. ; Eliseyev, I. ; Davydov, V. ; Korovin, A. ; Suturin, S. ; Sokolov, N. Diffraction studies of WS₂ crystallographic ordering during laser MBE growth on Al₂O₃(0001)Article Artikel 28-Mar-2025
61Gradwohl-2025-Nano Letters-vor.pdf.jpgGradwohl, Kevin-Peter ; Cvitkovich, Lukas ; Lu, Chen-Hsun ; Koelling, Sebastian ; Oezkent, Maximilian ; Liu, Yujia ; Waldhör, Dominic ; Grasser, Tibor ; Niquet, Yann-Michel ; Albrecht, Martin ; Richter, Carsten ; Moutanabbir, Oussama ; Martin, Jens Enhanced Nanoscale Ge Concentration Oscillations in Si/SiGe Quantum Well through Controlled SegregationArticle Artikel 19-Mar-2025
62Khakbaz, Pedram ; Waldhoer, Dominic ; Bahrami, Mina ; Knobloch, Theresia ; Pourfath, Mahdi ; Davoudi, Mohammad Rasool ; Zhang, Yichi ; Gao, Xiaoyin ; Peng, Hailin ; Waltl, Michael ; Grasser, Tibor Two-dimensional Bi₂SeO₂ and Its Native Insulators for Next-Generation NanoelectronicsArticle Artikel 18-Mar-2025
63Akhound-2025-ACS APPLIED MATERIALS  INTERFACES-vor.pdf.jpgAkhound, Mohammad Amin ; Soleimani, Maryam ; Pourfath, Mahdi Tunable N₂ fixation enabled by ferroelectric switching in doped graphene/In₂Se₃ dual-atom catalystsArticle Artikel 12-Mar-2025
64Sverdlov, Viktor ; Jorstad, Nils Petter ; Goes, Wolfgang ; Pruckner, Bernhard Fast Deterministic Switching in SOT-MRAM with an Additional Magnetic LayerPresentation VortragMar-2025
65Dubey-2025-IEEE Transactions on Electron Devices-vor.pdf.jpgDubey, Prabhat Kumar ; Marian, Damiano ; Toral-Lopez, Alejandro ; Knobloch, Theresia ; Grasser, Tibor ; Fiori, Gianluca Simulation of Vertically Stacked 2-D Nanosheet FETsArticle Artikel Mar-2025
66Zhai, Yuxuan ; Ge, Rui ; Hu, Ziyi ; Li, Junjie ; Shao, Hua ; Cheng, Jiawei ; Filipovic, Lado ; Chen, Rui Modeling the charging effect of the hardmask and silicon substrate during plasma etching in advanced nodesArticle Artikel 14-Feb-2025
67Wilhelmer, Christoph ; Waldhör, Dominic ; Knobloch, Theresia ; Stampfer, Bernhard ; Grasser, Tibor First-principles investigations of noise in ultra-scaled 2D field effect transistorsPresentation Vortrag12-Feb-2025
68Hamidi, Hoda ; Shojaei, Fazel ; Eslami, Hossein ; Aliabadi, Rasol ; Pourfath, Mahdi ; Vaez-Zadeh, Mehdi Computational Analyses of Peganum harmala Alkaloids as Green Corrosion Inhibitors on Fe(110)Article Artikel 11-Feb-2025
69Lukic, Ognjen ; Lacerda de Orio, Roberto ; Goes, Wolfgang ; Selberherr, Siegfried ; Sverdlov, Viktor Magnetic Field Accelerated Switching of an In-Plane MRAM CellInproceedings Konferenzbeitrag9-Feb-2025
70Pruckner, Bernhard ; Goes, Wolfgang ; Selberherr, Siegfried ; Sverdlov, Viktor Deterministic Switching of Noncollinear AntiferromagnetsInproceedings Konferenzbeitrag 9-Feb-2025
71Lashani Zand, Ali ; Kookhaee, Maryam ; Soleimani, Maryam ; Shobeyrian, Forough ; Niksirat, Amin ; Sanaee, Zeinab ; Pourfath, Mahdi First-Principles Calculation of Lithium and Sodium Ion Diffusion in Crystalline Silicon Suboxide for Next-Generation Battery AnodesArticle Artikel 6-Feb-2025
72Cerdeira, Antonio ; Estrada, Magali ; Mounir, Ahmed ; Grasser, Tibor ; Iniguez, Benjamin Analysis of the mobility behavior of MOS₂ 2D FETsArticle Artikel Feb-2025
73Borghi-2025-Applied Surface Science-vor.pdf.jpgBorghi, Mauro ; Giovanelli, Giulia ; Montecchi, Monica ; Capelli, Raffaella ; Mescola, Andrea ; Paolicelli, Guido ; D’Addato, Sergio ; Grasser, Tibor ; Pasquali, Luca Comprehensive study of SrF₂ growth on highly oriented pyrolytic graphite (HOPG): Temperature-dependent van der Waals epitaxyArticle Artikel 30-Jan-2025
74Cabanillas, Anthony ; Shahi, Simran ; Liu, Maomao ; Jaiswal, Hemendra Nath ; Wei, Sichen ; Fu, Yu ; Chakravarty, Anindita ; Ahmed, Asma ; Liu, Xiaochi ; Sun, Jian ; Yang, Cheng ; Yoo, Won Jong ; Knobloch, Theresia ; Perebeinos, Vasili ; Di Bartolomeo, Antonio ; Grasser, Tibor ; Yao, Fei ; Li, Huamin Enormous Out-of-Plane Charge Rectification and Conductance through Two-Dimensional MonolayersArticle Artikel 28-Jan-2025
75Speckmann-2024-Advanced Materials Interfaces-vor.pdf.jpgSpeckmann, Carsten ; Angeletti, Andrea ; Kývala, Lukáš ; Lamprecht, David ; Herterich, Felix ; Mangler, Clemens ; Filipovic, Lado ; Dellago, Christoph ; Franchini, Cesare ; Kotakoski, Jani Electron‐Beam‐Induced Adatom‐Vacancy‐Complexes in Mono‐ and Bilayer PhosphoreneArticle Artikel 13-Jan-2025
76Bendra-2024-Solid-State Electronics-vor.pdf.jpgBendra, Mario ; Lacerda de Orio, Roberto ; Selberherr, Siegfried ; Wolfgang Goes ; Sverdlov, Viktor A multi-level cell for ultra-scaled STT-MRAM realized by back-hoppingArticle Artikel Jan-2025
77Lamprecht, David ; Benzer, Anna ; Längle, Manuel ; Capin, Mate ; Mangler, Clemens ; Susi, Toma ; Filipovic, Lado ; Kotakoski, Jani Uncovering the Atomic Structure of Substitutional Platinum Dopants in MoS₂ with Single-Sideband PtychographyArticle Artikel 2025
78Fu, Yihao ; Shao, Hua ; Xia, Longrui ; Ge, Rui ; Bai, Lang ; He, Xiaobin ; Junjie Li ; Chen, Rui ; Wei, Yayi ; Li, Ling ; Filipovic, Lado Atomic-Level Monte Carlo Modeling of SiN Deposition by PECVDInproceedings Konferenzbeitrag 2025
79Gull, Josef ; Kosina, Hans Statistical Enhancement in Two-particle Device Monte CarloInproceedings Konferenzbeitrag2025
80Sverdlov, Viktor Advanced Modeling of Magnetic and Spin DevicesInproceedings Konferenzbeitrag2025
81Sverdlov, Viktor ; Selberherr, Siegfried 65 Years of Transistor Scaling: What about the Future?Inproceedings Konferenzbeitrag2025
82Roy Chaudhuri-2025-Random telegraph noise and excess leakage current due ...-vor.pdf.jpgRoy Chaudhuri, Rajarshi ; Rockermeier, Hubert ; Stabentheiner, Manuel ; Ruch, Bernhard ; Waltl, Michael ; Ostermeier, Clemens ; Pogany, Dionyz Random telegraph noise and excess leakage current due to intrinsic defects in p-i-n diodes on GaN-on-Si substrateInproceedings Konferenzbeitrag 2025
83Boschetto, G. ; Wilhelmer, Christoph ; Cvitkovich, Lukas ; Li, J. ; Waldhör, Dominic ; Grasser, Tibor ; Martinez, B. Multi-Scale Simulation Framework for the Modelling of Charge Capture and Emission in Spin Qubit DevicesInproceedings Konferenzbeitrag 2025
84Filipovic, Lado From Atoms to Reactors: Multi-Scale Modeling for Semiconductor FabricationInproceedings Konferenzbeitrag 2025
85Yuki, Ohuchi ; Stella, Robert ; Filipovic, Lado Development of a Gaussian Approximation Potential for Gan With Point Defects and Mg ImpuritiesInproceedings Konferenzbeitrag 2025
86Jørstad, Nils Petter ; Pruckner, Bernhard ; Goes, W. ; Selberherr, Siegfried ; Sverdlov, Viktor Effective Boundary-Conditions for Modeling Interfacial Spin-Orbit EffectsInproceedings Konferenzbeitrag2025
87Pruckner, Bernhard ; Jørstad, Nils Petter ; Goes, W. ; Selberherr, Siegfried ; Sverdlov, Viktor Modeling of Noncollinear Antiferromagnets for MRAM ApplicationInproceedings Konferenzbeitrag2025
88Sverdlov, Viktor ; Jørstad, Nils Petter ; Pruckner, Bernhard ; Bendra, Mario ; Goes, Wolfgang ; Selberherr, Siegfried Emerging Trends in Magnetoresistive MemoriesInproceedings Konferenzbeitrag2025
89Hadamek, Tomas ; Sverdlov, Viktor Temperature Modeling and Pulse Shaping Strategies for Energy Optimization in 2T-SOT MRAMInproceedings Konferenzbeitrag2025
90Hu, Ziyi ; Li, Junjie ; Chen, Rui ; Shang, Dashan ; Wei, Yayi ; Wang, Zhongrui ; Li, Ling ; Filipovic, Lado A Two-Step Dry Etching Model for Non-Uniform Etching Profile in Gate-All-Around Field-Effect Transistor ManufacturingArticle Artikel 19-Dec-2024
91Faber-2024-Journal of Physical Chemistry Letters-vor.pdf.jpgFaber, T ; Filipovic, L ; Koster, L J A The Hot Phonon Bottleneck Effect in Metal Halide PerovskitesArticle Artikel 16-Dec-2024
92Ravichandran, Harikrishnan ; Knobloch, Theresia ; Subbulakshmi Radhakrishnan, Shiva ; Wilhelmer, Christoph ; Stepanoff, Sergei ; Stampfer, Bernhard ; Ghosh, Subir ; Oberoi, Aaryan ; Waldhoer, Dominic ; Chen, Chen ; Redwing, Joan M. ; Wolfe, Douglas E. ; Grasser, Tibor ; Das, Saptarshi A stochastic encoder using point defects in two-dimensional materialsArticle Artikel 4-Dec-2024
93Franckel, Mathilde L.D. ; Turiansky, Mark E. ; Waldhör, Dominic ; Van De Walle, Chris G. First-principles study of proton migration in indium oxideArticle Artikel 1-Dec-2024
94Jørstad, Nils Petter ; Pruckner, Bernhard ; Goes, W. ; Selberherr, Siegfried ; Sverdlov, Viktor Magnetic Field Free SOT-MRAM SwitchingInproceedings KonferenzbeitragDec-2024
95Cvitkovich, Lukas ; Stano, Peter ; Wilhelmer, Christoph ; Waldhör, Dominic ; Loss, Daniel ; Niquet, Yann Michel ; Grasser, Tibor Coherence limit due to hyperfine interaction with nuclei in the barrier material of Si spin qubitsArticle Artikel Dec-2024
96Shao, Hua ; Reiter, Tobias ; Chen, Rui ; Li, Junjie ; Hu, Ziyi ; Wei, Yayi ; Li, Ling ; Filipovic, Lado Loading Effect during SiGe/Si Stack Selective Isotropic Etching for Gate-All-Around TransistorsArticle Artikel 26-Nov-2024
97Saleh, Ahmed Sobhi ; Croes, Kristof ; Ceric, Hajdin ; De Wolf, Ingrid ; Zahedmanesh, Houman A Comprehensive Microstructure-Aware Electromigration Modeling Framework; Investigation of the Impact of Trench Dimensions in Damascene Copper InterconnectsArticle Artikel 16-Nov-2024
98Stephanie, Margareta Vania ; Pham, Lam ; Schindler, Alexander ; Grasser, Tibor ; Waltl, Michael ; Schrenk, Bernhard Photonic Neuron With on Frequency-Domain ReLU Activation FunctionArticle Artikel 15-Nov-2024
99Propst-2024-Scientific Reports-vor.pdf.jpgPropst, Diana ; Joudi, Wael ; Längle, Manuel ; Madsen, Jacob ; Kofler, Clara ; Mayer, Barbara ; Lamprecht, David ; Mangler, Clemens ; Filipovic, Lado ; Susi, Toma ; Kotakoski, Jani Automated image acquisition and analysis of graphene and hexagonal boron nitride from pristine to highly defective and amorphous structuresArticle Artikel 6-Nov-2024
100Patoary, Naim Hossain ; Mamun, Fahad Al ; Xie, Jing ; Grasser, Tibor ; Sanchez Esqueda, Ivan Analysis and EOT Scaling on Top‐ and Double‐Gate 2D CVD‐Grown Monolayer MoS₂ FETsArticle Artikel Nov-2024