Franco, Jacopo

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Franco, Jacopo
 

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Results 1-13 of 13 (Search time: 0.002 seconds).

PreviewAuthors / EditorsTitleTypeIssue Date
1Wu, Zhicheng ; Franco, Jacopo ; Claes, Dieter ; Rzepa, Gerhard ; Roussel, Philippe J. ; Collaert, Nadine ; Groeseneken, Guido ; Linten, Dimitri ; Grasser, Tibor ; Kaczer, Ben Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and ModelingKonferenzbeitrag Inproceedings2019
2Sharma, Prateek ; Tyaginov, Stanislav ; Rauch, Stewart E. ; Franco, Jacopo ; Makarov, Alexander ; Vexler, Mikhail I. ; Kaczer, Ben ; Grasser, Tibor Hot-Carrier Degradation Modeling of Decananometer nMOSFETs Using the Drift-Diffusion ApproachArtikel Article2017
3Tyaginov, Stanislav ; Jech, Markus ; Franco, Jacopo ; Sharma, Prateek ; Kaczer, Ben ; Grasser, Tibor Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON n-MOSFETsArtikel Article2016
4Sharma, Prateek ; Tyaginov, Stanislav ; Rauch, Stewart E. ; Franco, Jacopo ; Kaczer, Ben ; Makarov, Alexander ; Vexler, Mikhail I. ; Grasser, Tibor A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETsKonferenzbeitrag Inproceedings 2016
5Franco, Jacopo ; Kaczer, Ben ; Roussel, Philippe J. ; Bury, Erik ; Mertens, Hans ; Ritzenthaler, Romain ; Grasser, Tibor ; Horiguchi, Naoto ; Thean, Aaron ; Groeseneken, Guido NBTI in Si<inf>0.55</inf>Ge<inf>0.45</inf> cladding p-FinFETs: Porting the superior reliability from planar to 3D architecturesKonferenzbeitrag Inproceedings2015
6Tyaginov, Stanislav ; Bina, Markus ; Franco, Jacopo ; Wimmer, Yannick ; Kaczer, Ben ; Grasser, Tibor On the Importance of Electron-Electron Scattering for Hot-Carrier DegradationArtikel Article2015
7Kaczer, Ben ; Franco, Jacopo ; Roussel, Philippe J. ; Groeseneken, Guido ; Chiarella, Thomas ; Horiguchi, Naoto ; Grasser, Tibor Extraction of The Random Component of Time-Dependent Variability Using Matched PairsArtikel Article2015
8Bina, Markus ; Tyaginov, Stanislav ; Franco, Jacopo ; Rupp, Karl ; Wimmer, Yannick ; Osintsev, Dmitry ; Kaczer, Ben ; Grasser, Tibor Predictive Hot-Carrier Modeling of n-Channel MOSFETsArtikel Article2014
9Tyaginov, Stanislav ; Bina, Markus ; Franco, Jacopo ; Wimmer, Yannick ; Osintsev, Dmitri ; Kaczer, Ben ; Grasser, Tibor A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETsKonferenzbeitrag Inproceedings2014
10Franco, Jacopo ; Kaczer, Ben ; Toledano-Luque, María ; Roussel, Philippe J. ; Kauerauf, Thomas ; Mitard, Jérôme ; Witters, Liesbeth ; Grasser, Tibor ; Groeseneken, Guido SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability IssuesArtikel Article2013
11Franco, Jacopo ; Kaczer, Ben ; Roussel, Philippe J. ; Mitard, Jérôme ; Cho, Moonju ; Witters, Liesbeth ; Grasser, Tibor ; Groeseneken, Guido SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTIArtikel Article2013
12Franco, Jacopo ; Kaczer, Ben ; Mitard, Jerome ; Toledano-Luque, Maria ; Roussel, Philippe J. ; Witters, Liesbeth ; Grasser, Tibor ; Groeseneken, Guido NBTI Reliability of SiGe and Ge Channel pMOSFETs With SiO2/HfO2 Dielectric StackArtikel Article2013
13Toledano-Luque, María ; Kaczer, Ben ; Grasser, Tibor ; Roussel, Philippe J. ; Franco, Jacopo ; Groeseneken, Guido Toward a Streamlined Projection of Small Device Bias Temperature Instability Lifetime DistributionsArtikel Article2013