Rescher, Gerald

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Rescher, Gerald
 

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PreviewAuthors / EditorsTitleTypeIssue Date
1Berens, Judith ; Pobegen, Gregor ; Rescher, Gerald ; Aichinger, Thomas ; Grasser, Tibor NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and ReliabilityArtikel Article2019
2Berens, Judith ; Pobegen, Gregor ; Eichinger, Thomas ; Rescher, Gerald ; Grasser, Tibor Cryogenic Characterization of NH₃ Post Oxidation Annealed 4H-SiC Trench MOSFETsArtikel Article2019
3Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement TechniqueArtikel Article2018
4Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device PreconditioningArtikel Article2018
5Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping TechniqueArtikel Article2017
6Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor On the subthreshold drain current sweep hysteresis of 4H-SiC nMOSFETsKonferenzbeitrag Inproceedings2016
7Rescher, Gerald ; Pobegen, Gregor ; Grasser, Tibor Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature StressArtikel Article2016