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Zanoni, E.
 

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PreviewAuthor(s)TitleTypeIssue Date
1Meneghini, M. ; Hilt, O. ; Fleury, C. ; Silvestri, R. ; Capriotti, M. ; Strasser, G. ; Pogany, D. ; Bahat-Treidel, E. ; Brunner, F. ; Knauer, A. ; Würfl, J. ; Rossetto, I. ; Zanoni, E. ; Meneghesso, G. ; Dalcanale, S. Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate-stress and ESD failureArtikel Article 2016
2Marko, P. ; Meneghini, M. ; Bychikhin, S. ; Marcon, D. ; Meneghesso, G. ; Zanoni, E. ; Pogany, D. IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistorsArtikel Article2012
3Marko, P. ; Alexewicz, A. ; Hilt, O. ; Meneghesso, G. ; Zanoni, E. ; Würfl, J. ; Strasser, G. ; Pogany, D. Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistorsArtikel Article2012