2015 IEEE International Electron Devices Meeting (IEDM)
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2015 IEEE International Electron Devices Meeting (IEDM)
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| Preview | Authors / Editors | Title | Type | Issue Date | |
|---|---|---|---|---|---|
| 1 | Grasser, T. ; Waltl, M. ; Wimmer, Y. ; Goes, W. ; Kosik, R. ; Rzepa, G. ; Reisinger, H. ; Pobegen, G. ; El-Sayed, A. ; Shluger, A. ; Kaczer, B. | Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes | Konferenzbeitrag Inproceedings  | 2015 |