2015 IEEE International Electron Devices Meeting (IEDM)

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		Preview	Author(s)	Title	Type	Issue Date
	1		Grasser, T. ; Waltl, M. ; Wimmer, Y. ; Goes, W. ; Kosik, R. ; Rzepa, G. ; Reisinger, H. ; Pobegen, G. ; El-Sayed, A. ; Shluger, A. ; Kaczer, B.	Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimes	Konferenzbeitrag Inproceedings	2015