2017 IEEE International Electron Devices Meeting (IEDM)
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2017 IEEE International Electron Devices Meeting (IEDM)
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Preview | Authors / Editors | Title | Type | Issue Date | |
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1 | Franco, J. ; Putcha, V. ; Vais, A. ; Sioncke, S. ; Waldron, N. ; Zhou, D. ; Rzepa, G. ; Roussel, Ph. J. ; Groeseneken, G. ; Heyns, M. ; Collaert, N. ; Linten, D. ; Grasser, T. ; Kaczer, B. | Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs (invited) | Konferenzbeitrag Inproceedings | 2017 | |
2 | Makarov, A. ; Tyaginov, S. E. ; Kaczer, B. ; Jech, M. ; Chasin, A. ; Grill, A. ; Hellings, G. ; Vexler, M. I. ; Linten, D. ; Grasser, T. | Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topology | Konferenzbeitrag Inproceedings | 2017 |