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| | Preview | Authors / Editors | Title | Type | Issue Date |
| 1 | | Jech, Markus ; El-Sayed, Al-Moatasem ; Tyaginov, Stanislav ; Waldhör, Dominic ; Bouakline, Foudhil ; Saalfrank, Peter ; Jabs, Dominic ; Jungemann, Christoph ; Waltl, Michael ; Grasser, Tibor | Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices | Artikel Article  | 2021 |
| 2 | | Makarov, Alexander ; Roussel, Philippe ; Bury, Erik ; Vandemaele, Michiel ; Spessot, Alessio ; Linten, Dimitri ; Kaczer, Ben ; Tyaginov, Stanislav | Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling Approach | Artikel Article | 2020 |
| 3 | | Vasilev, Alexander ; Jech, Markus ; Grill, Alexander ; Rzepa, Gerhard ; Schleich, Christian ; Makarov, Alexander ; Pobegen, Gregor ; Grasser, Tibor ; Waltl, Michael ; Tyaginov, Stanislav | Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors | Konferenzbeitrag Inproceedings | 2020 |
| 4 | | Jech, Markus ; Ullmann, Bianka ; Rzepa, Gerhard ; Tyaginov, Stanislav ; Grill, Alexander ; Waltl, Michael ; Jabs, Dominic ; Jungemann, Christoph ; Grasser, Tibor | Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory | Artikel Article | 2019 |
| 5 | | Makarov, Alexander ; Kaczer, Ben ; Chasin, Adrian ; Vandemaele, Michiel ; Bury, Erik ; Jech, Markus ; Grill, Alexander ; Hellings, Geert ; El-Sayed, Al-Moatasem ; Grasser, Tibor ; Linten, Dimitri ; Tyaginov, Stanislav | Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach | Artikel Article | 2019 |
| 6 | | Makarov, Alexander ; Kaczer, Ben ; Roussel, Philippe ; Chasin, Adrian ; Grill, Alexander ; Vandemaele, Michiel ; Hellings, Geert ; El-Sayed, Al-Moatasem ; Grasser, Tibor ; Linten, Dimitri ; Tyaginov, Stanislav | Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs | Artikel Article | 2019 |
| 7 | | Schleich, C. ; Berens, J. ; Rzepa, G. ; Pobegen, G. ; Rescher, G. ; Tyaginov, S. ; Grasser, T. ; Waltl, M. | Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs | Konferenzbeitrag Inproceedings | 2019 |
| 8 | | Scharlotta, Jean-Yean ; Bersuker, Gennadi ; Tyaginov, S. E. ; Young, Chadwing ; Haase, Gaddi ; Rzepa, Gerhard ; Waltl, Michael ; Chohan, Talha ; Iyer, Subramanian ; Kotov, Alexander ; Zambelli, Cristian ; Guarin, Fernando ; Puglisi, Francesco Maria ; Ostermaier, C | IIRW 2019 Discussion Group II: Reliability for Aerospace Applications | Konferenzbeitrag Inproceedings | 2019 |
| 9 | | Makarov, Alexander ; Roussel, Philippe ; Bury, Erik ; Vandemaele, Michiel ; Spessot, Alessio ; Linten, Dimitri ; Kaczer, Ben ; Tyaginov, Stanislav | On Correlation between Hot-Carrier Stress Induced Device Parameter Degradation and Time-Zero Variability | Konferenzbeitrag Inproceedings | 2019 |
| 10 | | Vandemaele, Michiel ; Kaczer, Ben ; Tyaginov, Stanislav ; Stanojevic, Zlatan ; Makarov, Alexander ; Chasin, Adrian ; Bury, Erik ; Mertens, Hans ; Linten, Dimitri ; Groeseneken, Guido | Full ($V_{\mathrm{g}},\ V_{\mathrm{d}}$) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs | Konferenzbeitrag Inproceedings | 2019 |
| 11 | | Makarov, A. ; Kaczer, B. ; Roussel, Ph. ; Chasin, A. ; Grill, A. ; Vandemaele, M. ; Hellings, G. ; El-Sayed, A.-M. ; Grasser, T. ; Linten, D. ; Tyaginov, S. | Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs | Konferenzbeitrag Inproceedings | 2019 |
| 12 | | Makarov, Alexander ; Kaczer, Ben ; Roussel, Philippe ; Chasin, A ; Vandemaele, Michiel ; Hellings, Geert ; El-Sayed, Al-Moatasem ; Jech, Markus ; Grasser, Tibor ; Linten, D ; Tyaginov, S. E. | Simulation Study: the Effect of Random Dopants and Random Traps on Hot-Carrier Degradation in nFinFETs | Konferenzbeitrag Inproceedings | 2019 |
| 13 | | Tyaginov, S. E. ; Chasin, A ; Makarov, Alexander ; El-Sayed, Al-Moatasem ; Jech, Markus ; De Keersgieter, An ; Eneman, G. ; Vandemaele, Michiel ; Franco, J. ; Linten, D ; Kaczer, Ben | Physics-based Modeling of Hot-Carrier Degradation in Ge NWFETs | Konferenzbeitrag Inproceedings | 2019 |
| 14 | | Makarov, Alexander ; Kaczer, Ben ; Roussel, Philippe ; Chasin, A ; Vandemaele, Michiel ; Hellings, Geert ; El-Sayed, Al-Moatasem ; Jech, Markus ; Grasser, Tibor ; Linten, D ; Tyaginov, S. E. | Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants | Konferenzbeitrag Inproceedings | 2019 |
| 15 | | Jech, Markus ; El-Sayed, Al-Moatasem ; Tyaginov, Stanislav ; Shluger, Alexander L. ; Grasser, Tibor | Ab Initio Treatment of Silicon-Hydrogen Bond Rupture at Si/SiO₂ Interfaces | Artikel Article | 2019 |
| 16 | | Tyaginov, S. E. ; Makarov, A. A. ; Kaczer, B. ; Jech, M. ; Chasin, A. ; Grill, A. ; Hellings, G. ; Vexler, M. I. ; Linten, D. ; Grasser, T. | Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs | Artikel Article | 2018 |
| 17 | | Makarov, A. A. ; Tyaginov, S. E. ; Kaczer, B. ; Jech, M. ; Chasin, A. ; Grill, A. ; Hellings, G. ; Vexler, M. I. ; Linten, D. ; Grasser, T. | Analysis of the Features of Hot-Carrier Degradation in FinFETs | Artikel Article | 2018 |
| 18 | | Tyaginov, S. E. ; Makarov, A. A. ; Jech, M. ; Vexler, M. I. ; Franco, J. ; Kaczer, B. ; Grasser, T. | Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures | Artikel Article | 2018 |
| 19 | | Tyaginov, S.E. ; Jech, M. ; Rzepa, G. ; Grill, A. ; El-Sayed, A.-M. ; Pobegen, G. ; Makarov, A. ; Grasser, T. | Border Trap Based Modeling of SiC Transistor Transfer Characteristics | Konferenzbeitrag Inproceedings | 2018 |
| 20 | | Vandemaele, Michiel ; Kaczer, Ben ; Stanojevic, Zlatan ; Tyaginov, Stanislav ; Makarov, Alexander ; Chasin, Adrian ; Mertens, Hans ; Linten, Dimitri ; Groeseneken, Guido | Distribution Function Based Simulations of Hot-Carrier Degradation in Nanowire FETs | Konferenzbeitrag Inproceedings | 2018 |
