222nd ECS Meeting : The Electrochemical Society of Japan - 2012 Fall Meeting (PRiME 2012)

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Description

Event name
222nd ECS Meeting : The Electrochemical Society of Japan - 2012 Fall Meeting (PRiME 2012)
 
Event type
Event for scientific audience
 
Start date
07-10-2012
End date
12-10-2012
 
Location
Honolulu
Country
United States
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-3 of 3 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Palankovski, Vassil ; Kuzmik, J. Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional SimulationKonferenzbeitrag Inproceedings2012
2Palankovski, Vassil ; Kuzmik, J. A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency ApplicationsKonferenzbeitrag Inproceedings2012
3Franco, J. ; Kaczer, Ben ; Mitard, J. ; Toledano-Luque, M. ; Eneman, G. ; Roussel, Ph. J. ; Cho, M. ; Kauerauf, T. ; Grasser, Tibor ; Witters, L. ; Hellings, Geert ; Ragnarsson, L. A. ; Horiguchi, N. ; Heyns, Marc M. ; Groeseneken, G. Reliability of SiGe Channel MOSKonferenzbeitrag Inproceedings2012