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Record link: 
http://hdl.handle.net/20.500.12708/73015
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Title: 
Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation
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Citation: 
Palankovski, V., & Kuzmik, J. (2012). Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional Simulation. In ECS Meeting Abstracts (p. 1). http://hdl.handle.net/20.500.12708/73015
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Publication Type: 
Inproceedings - Full-Paper Contribution
en
Authors: 
Palankovski, Vassil 
Kuzmik, J. 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Published in: 
ECS Meeting Abstracts 
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Date (published): 
2012
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Event name: 
Honolulu PRiME 2012 
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Event date: 
7-Oct-2012 - 12-Oct-2012
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Event place: 
Honolulu, USA, Non-EU
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Number of Pages: 
1
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Peer reviewed: 
No
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Science Branch: 
Elektrotechnik, Elektronik
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Appears in Collections:
Conference Paper

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