IEEE International Electron Devices Meeting (IEDM)

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Description

Event name
IEEE International Electron Devices Meeting (IEDM)
 
Event type
Event for scientific audience
 
Start date
11-12-1988
End date
14-12-1988
 
Location
San Francisco, CA, USA
Country
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

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Author:  Stesmans, A.

Results 1-2 of 2 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Franco, J. ; Kaczer, B. ; Eneman, G. ; Mitard, J. ; Stesmans, A. ; Afanas'ev, V. ; Kauerauf, T. ; Roussel, Ph.J. ; Toledano-Luque, M. ; Cho, M. ; Degraeve, R. ; Grasser, T. ; Ragnarsson, L.-A. ; Witters, L. ; Tseng, J. ; Takeoka, S. ; Wang, W.-E. ; Hoffmann, T.Y. ; Groeseneken, G. 6Å EOT Si<inf>0.45</inf>Ge<inf>0.55</inf> pMOSFET with optimized reliability (V<inf>DD</inf>=1V): Meeting the NBTI lifetime target at ultra-thin EOTKonferenzbeitrag Inproceedings2010
2Grasser, T. ; Goes, W. ; Wimmer, Y. ; Schanovsky, F. ; Rzepa, G. ; Waltl, M. ; Rott, K. ; Reisinger, H. ; Afanas'ev, V.V. ; Stesmans, A. ; El-Sayed, Al-Moatasem Bellah ; Shluger, A.L. On the microscopic structure of hole traps in pMOSFETsKonferenzbeitrag Inproceedings2014