IEEE International Electron Devices Meeting (IEDM)

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Description

Event name
IEEE International Electron Devices Meeting (IEDM)
 
Event type
Event for scientific audience
 
Start date
11-12-1988
End date
14-12-1988
 
Location
San Francisco, CA, USA
Country
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Filter:
Author:  Goes, W.
Author:  Waltl, M.

Results 1-3 of 3 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Grasser, T. ; Waltl, M. ; Wimmer, Y. ; Goes, W. ; Kosik, R. ; Rzepa, G. ; Reisinger, H. ; Pobegen, G. ; El-Sayed, A. ; Shluger, A. ; Kaczer, B. Gate-sided hydrogen release as the origin of "permanent" NBTI degradation: From single defects to lifetimesKonferenzbeitrag Inproceedings 2015
2Grasser, T. ; Rott, K. ; Reisinger, H. ; Waltl, M. ; Wagner, P. ; Schanovsky, F. ; Goes, W. ; Pobegen, G. ; Kaczer, B. Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTIKonferenzbeitrag Inproceedings2013
3Grasser, T. ; Goes, W. ; Wimmer, Y. ; Schanovsky, F. ; Rzepa, G. ; Waltl, M. ; Rott, K. ; Reisinger, H. ; Afanas'ev, V.V. ; Stesmans, A. ; El-Sayed, Al-Moatasem Bellah ; Shluger, A.L. On the microscopic structure of hole traps in pMOSFETsKonferenzbeitrag Inproceedings2014