2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

Event name
2005 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
 
Event type
Event for scientific audience
 
Start date
01-09-2005
End date
03-09-2005
 
Location
Tokyo
Country
Japan
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Filter:
Author:  Grasser, Tibor

Results 1-4 of 4 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Sheikholeslami, A. ; Parhami, F. ; Heinzl, R. ; Al-Ani, E. ; Heitzinger, C. ; Badrieh, F. ; Puchner, H. ; Grasser, T. ; Selberherr, S. Applications of Three-Dimensional Topography Simulation in the Design of Interconnect LinesKonferenzbeitrag Inproceedings2005
2Schwaha, Philipp ; Heinzl, Rene ; Spevak, Michael ; Grasser, Tibor Coupling Three-Dimensional Mesh Adaptation with an A Posteriori Error EstimatorKonferenzbeitrag Inproceedings2005
3Heinzl, R. ; Grasser, T. Generalized Comprehensive Approach for Robust Three-Dimensional Mesh Generation for TCADKonferenzbeitrag Inproceedings2005
4Entner, Robert ; Gehring, Andreas ; Kosina, Hans ; Grasser, Tibor ; Selberherr, Siegfried Modeling of Tunneling Currents for Highly Degraded CMOS DevicesKonferenzbeitrag Inproceedings2005