International Workshop on Nitride Semiconductors 2012 (INW)

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Description

Event name
International Workshop on Nitride Semiconductors 2012 (INW)
 
Event type
Event for scientific audience
 
Start date
14-10-2012
End date
19-10-2012
 
Location
Sapporo, Japan
Country
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-3 of 3 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Meneghesso, Gaudenzio ; Meneghini, M ; Zanandrea, A ; Rampazzo, Fabiana ; Stocco, Antonio ; Bertin, Marco ; Pogany, Dionyz ; Zanoni, Enrico Evidence for breakdown luminescence in AlGaN/GaN HEMTsPräsentation Presentation2012
2Jurkovic, M ; Gregusova, Dagmar ; Hascik, S. ; Blaho, M. ; Cico, Karol ; Palankovski, Vassil ; Carlin, J.-F ; Grandjean, Nicolas ; Kuzmik, Jan Polarization Engineered Normally-Off GaN/InlN/AlN/GaN HEMTKonferenzbeitrag Inproceedings2012
3Marko, Paul ; Alexewicz, Alexander ; Meneghini, M ; Meneghesso, Gaudenzio ; Zanoni, Enrico ; Hilt, O ; Würfl, Joachim ; Strasser, Gottfried ; Pogany, Dionyz Pre-breakdown current fluctuations and RTS noise in reverse-bias-stressed AlGaN/GaN HEMTsPräsentation Presentation2012