International Workshop on Nitride Semiconductors 2012 (INW)
Event name
International Workshop on Nitride Semiconductors 2012 (INW)
Event type
Event for scientific audience
Start date
14-10-2012
End date
19-10-2012
Location
Sapporo, Japan
Country
Event format Veranstaltungsformat
On Site
Results 1-3 of 3 (Search time: 0.002 seconds).
| Preview | Authors / Editors | Title | Type | Issue Date | |
|---|---|---|---|---|---|
| 1 | Meneghesso, Gaudenzio ; Meneghini, M ; Zanandrea, A ; Rampazzo, Fabiana ; Stocco, Antonio ; Bertin, Marco ; Pogany, Dionyz ; Zanoni, Enrico | Evidence for breakdown luminescence in AlGaN/GaN HEMTs | Präsentation Presentation | 2012 | |
| 2 | Jurkovic, M ; Gregusova, Dagmar ; Hascik, S. ; Blaho, M. ; Cico, Karol ; Palankovski, Vassil ; Carlin, J.-F ; Grandjean, Nicolas ; Kuzmik, Jan | Polarization Engineered Normally-Off GaN/InlN/AlN/GaN HEMT | Konferenzbeitrag Inproceedings | 2012 | |
| 3 | Marko, Paul ; Alexewicz, Alexander ; Meneghini, M ; Meneghesso, Gaudenzio ; Zanoni, Enrico ; Hilt, O ; Würfl, Joachim ; Strasser, Gottfried ; Pogany, Dionyz | Pre-breakdown current fluctuations and RTS noise in reverse-bias-stressed AlGaN/GaN HEMTs | Präsentation Presentation | 2012 |