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Record link: 
http://hdl.handle.net/20.500.12708/73478
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Title: 
Polarization Engineered Normally-Off GaN/InlN/AlN/GaN HEMT
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Citation: 
Jurkovic, M., Gregusova, D., Hascik, S., Blaho, M., Cico, K., Palankovski, V., Carlin, J.-F., Grandjean, N., & Kuzmik, J. (2012). Polarization Engineered Normally-Off GaN/InlN/AlN/GaN HEMT. In International Workshop on Nitride Semiconductors (p. 2). http://hdl.handle.net/20.500.12708/73478
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Publication Type: 
Inproceedings - Full-Paper Contribution
en
Authors: 
Jurkovic, M 
Gregusova, Dagmar 
Hascik, S. 
Blaho, M. 
Cico, Karol 
Palankovski, Vassil 
Carlin, J.-F 
Grandjean, Nicolas 
Kuzmik, Jan 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
E362 - Institut für Festkörperelektronik 
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Published in: 
International Workshop on Nitride Semiconductors 
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Date (published): 
2012
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Event name: 
International Workshop on Nitride Semiconductors 2012 (INW) 
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Event date: 
14-Oct-2012 - 19-Oct-2012
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Event place: 
Sapporo, Japan, Non-EU
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Number of Pages: 
2
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Peer reviewed: 
No
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Science Branch: 
Elektrotechnik, Elektronik
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Appears in Collections:
Conference Paper

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