IEEE Transactions on Electron Devices

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Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Subject:  Electronic, Optical and Magnetic Materials
Date Issued:  [2000 TO 2009]
Author:  Kosina, Hans

Results 1-4 of 4 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Palestri, P ; Barin, N ; Brunel, D ; Busseret, C ; Campera, A ; Childs, P ; Driussi, F ; Fiegna, C. ; Fiori, G ; Gusmeroli, R ; Iannaccone, G ; Karner, Markus ; Kosina, Hans ; Lacaita, Andrea Leonardo ; Langer, Erasmus ; Majkusiak, Bogdan ; Monzio Compagnoni, C ; Poncet, A ; Sangiorgi, E. ; Selmi, L ; Spinelli, A ; Walczak, J Comparison of Modeling Approaches for the Capacitance-Voltage and Current-Voltage Characteristics of Advanced Gate StacksArtikel Article Jan-2007
2Dhar, Siddhartha ; Kosina, Hans ; Palankovski, Vassil ; Ungersböck, Stephan Enzo ; Selberherr, Siegfried Electron Mobility Model for Strained-Si DevicesArtikel Article 2005
3Dhar, Siddhartha ; Kosina, Hans ; Karlowatz, Gerhard ; Ungersboeck, Stephan Enzo ; Grasser, Tibor ; Selberherr, Siegfried High-Field Electron Mobility Model for Strained-Silicon DevicesArtikel Article2006
4Ungersboeck, E. ; Dhar, S. ; Karlowatz, G. ; Sverdlov, V. ; Kosina, H. ; Selberherr, S. The Effect of General Strain on the Band Structure and Electron Mobility of SiliconArtikel Article2007