Semiconductor Science and Technology

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Journal description

Title Titel
Semiconductor Science and Technology
 
e-ISSN
1361-6641
 
ISSN
0268-1242
 
Publisher Herausgeber
IOP PUBLISHING LTD
 
Publisher's Address Herausgeber Adresse
TEMPLE CIRCUS, TEMPLE WAY, BRISTOL, ENGLAND, BS1 6BE
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Date Issued:  [2000 TO 2009]

Results 1-7 of 7 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Henkel, Christoph ; Abermann, Stephan ; Bethge, Ole ; Bertagnolli, Emmerich Atomic layer-deposited platinum in high-κ/metal gate stacksArtikel Article2009
2Özcan, S ; Smoliner, J ; Andrews, A M ; Strasser, G ; Dienel, T ; Franke, R ; Fritz, T Ballistic electron attenuation length in titanylphthalocyanine films grown on GaAsArtikel Article2008
3Brezna, Wolfgang ; Strasser, Gottfried ; Smoliner, Jürgen Force- and bias-dependent contrast in atomic force microscopy based photocurrent imaging on GaAs-AlAs heterostructuresArtikel Article2007
4Abermann, Stephan ; Pozzovivo, Gianmauro ; Kuzmik, Jan ; Strasser, Gottfried ; Pogany, Dionyz ; Carlin, Jean-François ; Grandjean, Nicolas ; Bertagnolli, Emmerich MOCVD of HfO₂ and ZrO₂ high-κ gate dielectrics for InAlN/AlN/GaN MOS- HEMTsArtikel Article2007
5Brezna, Wolfgang ; Roch, Tomas ; Strasser, Gottfried ; Smoliner, Jürgen Quantitative scanning capacitance spectroscopy on GaAs and InAs quantum dotsArtikel Article2005
6Ťapajna, M ; Čičo, K ; Kuzmík, J ; Pogany, D ; Pozzovivo, G ; Strasser, G ; Carlin, J-F ; Grandjean, N ; Fröhlich, K Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al₂O₃/InAlN/GaN heterostructuresArtikel Article2009
7Wagner, Martin ; Span, Gerhard ; Holzer, Stefan ; Grasser, Tibor Thermoelectric Power Generation Using Large-Area Si/SiGe pn-Junctions with Varying Ge ContentArtikel Article2007