| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Kohneh Poushi, Seyed Saman ; Goll, B. ; Schneider-Hornstein, K. ; Zimmermann, Horst | Large Active Area, Low Capacitance Multi-Dot PIN Photodiode in 0.35 µm CMOS Technology | Article Artikel | Feb-2024 |
| 2 | | Goll, B. ; Hofbauer, M. ; Zimmermann, Horst | A BiCMOS Active Quencher Using an Inverter-Based Differential Amplifier in the Comparator | Article Artikel | 2024 |
| 3 | | Schartmüller, Fabio ; Hauser, Michael ; Kuttner, Alexander ; Zimmermann, Horst ; Hofbauer, Michael | Direct-sequence-CDMA in highly sensitive indirect time-of-flight distance sensor | Article Artikel | Dec-2023 |
| 4 | | Ribisch, Christoph ; Hofbauer, Michael ; Kohneh Poushi, Seyed Saman ; Zimmer, Alexander ; Schneider-Hornstein, Kerstin ; Goll, Bernhard ; Zimmermann, Horst | Multi-channel gating chip in 0.18 µm high-voltage CMOS for quantum applications | Article Artikel | Dec-2023 |
| 5 | | Abdollahi, Behnam ; Zimmermann, Horst | A Low-Power Current-Reuse Self-Biased Regulated-Cascode TIA in 130nm SiGe BiCMOS for Low-Noise and High Data Rate Applications | Inproceedings Konferenzbeitrag | 6-Nov-2023 |
| 6 | | Abdollahi, Behnam ; Zimmermann, Horst | A Low-Noise Low-Power Inductor-Less Self- Biased 50 Gbps TIA in 130nm SiGe BiCMOS | Inproceedings Konferenzbeitrag | 18-Oct-2023 |
| 7 | | Zimmermann, Horst | Ultra-Sensitive PIN and Avalanche Photodiode Receivers | Book Buch | Oct-2023 |
| 8 | | Gasser, Christoph ; Goll, Bernhard ; Zimmermann, Horst | Highly sensitive hybrid optical receiver with a compact 1.4 GHz linear transimpedance amplifier in 55 nm CMOS | Article Artikel | Sep-2023 |
| 9 | | Kohneh Poushi, Seyed Saman ; Gasser, Christoph ; Goll, Bernhard ; Hofbauer, Michael ; Schneider-Hornstein, Kerstin ; Zimmermann, Horst | A Near-Infrared Enhanced Field-Line Crowding Based CMOS-Integrated Avalanche Photodiode | Article Artikel | Jun-2023 |
| 10 | | Schneider-Hornstein, Kerstin ; Goll, Bernhard ; Zimmermann, Horst | Ultra-Sensitive PIN-Photodiode Receiver | Article Artikel | Jun-2023 |
| 11 | | Hofbauer, Michael | Position Resolved Radiation Testing of Integrated Optical Detectors and Digital Circuits | Presentation Vortrag | 23-May-2023 |
| 12 | | Goll, Bernhard ; Schneider-Hornstein, Kerstin ; Zimmermann, Horst | Ultra-Low Capacitance Spot PIN Photodiodes | Article Artikel | Apr-2023 |
| 13 | | Kohneh Poushi, Seyed Saman ; Goll, Bernhard ; Schneider-Hornstein, Kerstin ; Hofbauer, Michael ; Zimmermann, Horst | Area and Bandwidth Enhancement of an n+/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology | Article Artikel | 23-Mar-2023 |
| 14 | | Hauser, Michael Franz ; Zimmermann, Horst ; Hofbauer, Michael | Indirect Time-of-Flight with GHz Correlation Frequency and Integrated SPAD Reaching Sub-100 µm Precision in 0.35 µm CMOS | Article Artikel | 1-Mar-2023 |
| 15 | | Goll, B. ; Schneider-Hornstein, K. ; Zimmermann, H. | Dot PIN Photodiodes With a Capacitance Down to 1.14 aF/μm2 | Article Artikel | 2023 |
| 16 | | Kuttner, Alexander ; Marschner, Stefan ; Steindl, Bernhard ; Schneider-Hornstein, Kerstin ; Hofbauer, Michael ; Zimmermann, Horst | Monolithic Receiver with Nine Single-Photon Avalanche Diodes | Inproceedings Konferenzbeitrag | 2023 |
| 17 | | Kohneh Poushi, S. S. ; Goll, B. ; Schneider-Hornstein, K. ; Hofbauer, Michael ; Zimmermann, Horst | CMOS Integrated 32 A/W and 1.6 GHz Avalanche Photodiode Based on Electric Field-Line Crowding | Article Artikel | 15-Sep-2022 |
| 18 | | Dervic, Alija ; Zimmermann, Horst | SPAD Mixed-Quenching Circuit in 0.35-µm CMOS for Achieving a PDP of 39.2% at 854 nm | Inproceedings Konferenzbeitrag | 29-Jul-2022 |
| 19 | | Abdollahi, Behnam ; Mesgari, Baset ; Saeedi, Saeed ; Roshanshomal, Ehsan ; Nabavi, Abdolreza ; Zimmermann, Horst | Transconductance Boosting Technique for Bandwidth Extension in Low-Voltage and Low-Noise Optical TIAs | Artikel Article | Mar-2022 |
| 20 | | Kuttner, Alexander ; Hauser, Michael ; Zimmermann, Horst ; Hofbauer, Michael | Highly Sensitive Indirect Time-of-Flight Distance Sensor With Integrated Single-Photon Avalanche Diode in 0.35 µm CMOS | Artikel Article | 2022 |