TCAD Mikroelektronik - Christian Doppler Laboratorium Technologie-CAD in der Mikroelektronik

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Primary Data

Project Acronym Projekt Kurzbezeichnung
TCAD Mikroelektronik
 
Project Title (de) Projekttitel (de)
TCAD Mikroelektronik - Christian Doppler Laboratorium Technologie-CAD in der Mikroelektronik
 
Project Title (en) Projekttitel (en)
TCAD Microelectronics - Christian Doppler Laboratory for Technology CAD in Microelectronics
 
Consortium Coordinator Koordinator des Konsortiums
 
Principal Investigator Projektleiter_in
 

Grants

Funder/Funding Agency Fördergeber
Christian Doppler Forschungsgesells
Grant number Förderkennnummer
CDL TCAD
 

Publications

Results 1-9 of 9 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Aguinsky-2023-Solid-State Electronics-vor.pdf.jpgAguinsky, Luiz Felipe ; Souza Berti Rodrigues, Francio ; Reiter, Tobias ; Klemenschits, Xaver ; Filipovic, Lado ; Hössinger, Andreas ; Weinbub, Josef Modeling Incomplete Conformality During Atomic Layer Deposition in High Aspect Ratio StructuresArticle Artikel Mar-2023
2Lenz-2023-Journal of Scientific Computing-vor.pdf.jpgLenz, Christoph ; Aguinsky, Luiz Felipe ; Hössinger, Andreas ; Weinbub, Josef A Complementary Topographic Feature Detection Algorithm Based on Surface Curvature for Three-Dimensional Level-Set FunctionsArticle Artikel Mar-2023
3Lenz, Christoph ; Aguinsky, Luiz Felipe ; Hössinger, Andreas ; Weinbub, Josef A Complementary Topographic Feature Detection Algorithm Based on Surface Curvature for Three-Dimensional Level-Set FunctionsArticle Artikel 8-Feb-2023
4Grasser, Tibor Non-Parabolic Macroscopic Transport Models for Semiconductor Device SimulationArtikel Article2005
5Ayalew, T. ; Grasser, T. ; Kosina, H. ; Selberherr, Siegfried Modeling of Lattice Site-Dependent Incomplete Ionization in α-SiC DevicesArtikel Article2005
6Ayalew, T. ; Kim, Sang Cheol ; Grasser, T. ; Selberherr, Siegfried Numerical Analysis of SiC Merged PiN Schottky DiodesArtikel Article2005
7Kim, Sang Cheol ; Bahng, Wook ; Kim, Nam Kyun ; Kim, Eun Dong ; Ayalew, T. ; Grasser, T. ; Selberherr, Siegfried Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET fabricationArtikel Article2005
8Wagner, Stephan ; Grasser, Tibor ; Selberherr, Siegfried Evaluation of Linear Solver Modules for Semiconductor Device SimulationPräsentation Presentation2004
9Ayalew, Tesfaye ; Gehring, Andreas ; Grasser, Tibor ; Selberherr, Siegfried Enhancement of Breakdown Voltage for Ni-SiC Schottky Diodes Utilizing Field Plate Edge TerminationPräsentation Presentation2004