Affordable smart GaN IC solutions for greener applications

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Primary Data

Project Acronym Projekt Kurzbezeichnung
ALL2GaN
 
Project Title (de) Projekttitel (de)
Affordable smart GaN IC solutions for greener applications
 
Project Title (en) Projekttitel (en)
ffordable smart GaN IC solutions for greener applications
 
Consortium Coordinator Koordinator des Konsortiums
 
Principal Investigator Projektleiter_in
 

Grants

Funder/Funding Agency Fördergeber
FFG - Österr. Forschungsförderungs- gesellschaft mbH
Grant number Förderkennnummer
101111890
 

Publications

Results 1-3 of 3 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Wieland, D. ; Butej, B. ; Stabentheiner, M. ; Koller, C. ; Pogany, D. ; Ostermaier, C. Analyzing the role of hole injection on the short circuit performance of p-GaN gate power HEMTsArticle Artikel Jun-2025
2Roy Chaudhuri-2025-Random telegraph noise and excess leakage current due ...-vor.pdf.jpgRoy Chaudhuri, Rajarshi ; Rockermeier, Hubert ; Stabentheiner, Manuel ; Ruch, Bernhard ; Waltl, Michael ; Ostermeier, Clemens ; Pogany, Dionyz Random telegraph noise and excess leakage current due to intrinsic defects in p-i-n diodes on GaN-on-Si substrateInproceedings Konferenzbeitrag 2025
3Butej, Boris ; Wieland, Dominik ; Pogany, Dionyz ; Gharib, Amgad ; Pobegen, Gregor ; Ostermaier, Clemens ; Koller, Christian Evidence‐based understanding of lateral hole transport during OFF‐state stress completing dynamic GaN‐on‐Si buffer charging modelArticle Artikel 2024