Strasser, Gottfried

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Strasser, Gottfried
 
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Author:  Alexewicz, Alexander

Results 1-20 of 27 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Capriotti, M ; Bethge, Ole ; Fleury, Clement ; Alexewicz, Alexander ; Bertagnolli, Emmerich ; Pogany, Dionyz ; Strasser, Gottfried Gate dielectric in GaN-based Metal Oxide Semiconductor High Electron Mobility Transistors: an overview on technology, issues and limitationsPräsentation Presentation2014
2Capriotti, M ; Alexewicz, Alexander ; Fleury, Clement ; Derluyn, Joff ; Visalli, Domenica ; Pogany, Dionyz ; Strasser, Gottfried Different layer designs for normally-off GaN HEMTs with ultrathin AlN barrier, GaN cap and in situ SiN passivationPräsentation Presentation2014
3Capriotti, M. ; Alexewicz, A. ; Fleury, C. ; Gavagnin, M. ; Bethge, O. ; Visalli, D. ; Derluyn, J. ; Wanzenböck, H. D. ; Bertagnolli, E. ; Pogany, D. ; Strasser, G. Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al2O3 in AlGaN/GaN high electron mobility transistors with normally off capabilityArtikel Article2014
4Capriotti, M ; Alexewicz, Alexander ; Bethge, Ole ; Visalli, Domenica ; Derluyn, Joff ; Fleury, Clement ; Bertagnolli, Emmerich ; Pogany, Dionyz ; Strasser, Gottfried AlGaN/GaN MOSHEMTS with selective removal of In-Situ Grown SiN PassivationKonferenzbeitrag Inproceedings2013
5Alexewicz, Alexander ; Capriotti, M ; Bethge, Ole ; Visalli, Domenica ; Derluyn, Joff ; Pogany, Dionyz ; Bertagnolli, Emmerich ; Strasser, Gottfried Normally-off GaN MOSHEMTs with thin barrier on Si substratePräsentation Presentation2013
6Capriotti, M ; Alexewicz, Alexander ; Bethge, Ole ; Visalli, Domenica ; Derluyn, Joff ; Fleury, Clement ; Bertagnolli, Emmerich ; Pogany, Dionyz ; Strasser, Gottfried Role of In-Situ Grown SiN Passivation for E-Mode AlGaN/GaN MOSHEMTS on silicon substrate for efficient power convertersPräsentation Presentation2013
7Alexewicz, A. ; Alomari, M. ; Maier, D. ; Behmenburg, H. ; Giesen, C. ; Heuken, M. ; Pogany, D. ; Kohn, E. ; Strasser, G. Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivationArtikel Article2013
8Čičo, K. ; Gregušová, D. ; Kuzmík, J. ; Jurkovič, M. ; Alexewicz, A. ; di Forte Poisson, M.-A. ; Pogany, D. ; Strasser, G. ; Delage, S. ; Fröhlich, K. Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivationArtikel Article2012
9Kuzmik, Jan ; Vitanov, Stanislav ; Dua, Christian ; Carlin, Jean-Francois ; Ostermaier, Clemens ; Alexewicz, Alexander ; Strasser, Gottfried ; Pogany, Dionyz ; Gornik, Erich ; Grandjean, Nicolas ; Delage, Sylvain ; Palankovski, Vassil Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility TransistorsArtikel Article2012
10Marko, Paul ; Alexewicz, Alexander ; Hilt, O ; Meneghesso, Gaudenzio ; Würfl, Joachim ; Zanoni, Enrico ; Strasser, Gottfried ; Pogany, Dionyz Random telegraph noise and bursts in reverse-bias-stressed AlGaN/GaN HEMTsKonferenzbeitrag Inproceedings2012
11Marko, P. ; Alexewicz, A. ; Hilt, O. ; Meneghesso, G. ; Zanoni, E. ; Würfl, J. ; Strasser, G. ; Pogany, D. Random telegraph signal noise in gate current of unstressed and reverse-bias-stressed AlGaN/GaN high electron mobility transistorsArtikel Article2012
12Marko, Paul ; Alexewicz, Alexander ; Meneghini, M ; Meneghesso, Gaudenzio ; Zanoni, Enrico ; Hilt, O ; Würfl, Joachim ; Strasser, Gottfried ; Pogany, Dionyz Pre-breakdown current fluctuations and RTS noise in reverse-bias-stressed AlGaN/GaN HEMTsPräsentation Presentation2012
13Alexewicz, Alexander ; Marko, Paul ; Alomari, M ; Behmenburg, H ; Giesen, C. ; Heuken, M ; Pogany, Dionyz ; Kohn, Erhard ; Strasser, Gottfried InAlGaN/AlN GaN-HEMTs with In-Situ SiN PassivationPräsentation Presentation2012
14Alexewicz, Alexander ; Marko, Paul ; Alomari, M ; Behmenburg, H ; Giesen, C. ; Heuken, M ; Pogany, Dionyz ; Kohn, Erhard ; Strasser, Gottfried Performance Enhancement of InAlGaN/AlN GaN-HEMTs by using In-Situ SiN PassivationPräsentation Presentation2012
15Alexewicz, Alexander ; Marko, Paul ; Alomari, M ; Behmenburg, H ; Giesen, C. ; Heuken, M ; Pogany, Dionyz ; Kohn, Erhard ; Strasser, Gottfried InAlGaN/AlN GaN-HEMTs with In-Situ SiN PassivationPräsentation Presentation2012
16Alexewicz, Alexander ; Behmenburg, H ; Giesen, C. ; Heuken, M ; Bychikhin, Sergey ; Kuzmik, J. ; Strasser, Gottfried ; Pogany, Dionyz Thermal analysis and simulation of InAlGaN/AlN GaN HEMTS on Si-Diamond-Si SubstratesKonferenzbeitrag Inproceedings2012
17Alexewicz, A. ; Ostermaier, C. ; Henkel, C. ; Bethge, O. ; Carlin, J.-F. ; Lugani, L. ; Grandjean, N. ; Bertagnolli, E. ; Pogany, D. ; Strasser, G. Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN-GaN metal oxide semiconductor high electron mobility transistors on Si substratesArtikel Article 2012
18Alexewicz, Alexander ; Ostermaier, C ; Henkel, Christoph ; Bethge, Ole ; Carlin, Jean-François ; Gonschorek, Marcus ; Grandjean, Nicolas ; Pogany, Dionyz ; Bertagnolli, Emmerich ; Strasser, Gottfried E-Mode InAlN/AlN-GaN MOS-HEMTs on Si SubstratesPräsentation Presentation2012
19Ostermaier, C ; Lagger, Peter Willibald ; Alomari, M ; Herfurth, Patrick ; Maier, D ; Alexewicz, Alexander ; di Forte Poisson, Marie-Antoinette ; Delage, S.L. ; Strasser, Gottfried ; Pogany, Dionyz ; Kohn, Erhard Reliability Investigation of the Degradation of the Surface Passivation of InAlN/GaN HEMTs using a Dual Gate StructurePräsentation Presentation2012
20Ostermaier, Clemens ; Lagger, Peter ; Alomari, Mohammed ; Herfurth, Patrick ; Maier, David ; Alexewicz, Alexander ; Forte-Poisson, Marie-Antoinette di ; Delage, Sylvain L. ; Strasser, Gottfried ; Pogany, Dionyz ; Kohn, Erhard Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structureArtikel Article 2012

Contributing Publications Mitbeteiligte Publikationen


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Author:  Alexewicz, Alexander

Results 1-1 of 1 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Alexewicz, Alexander GaN-based heterostructures for normally-off high electron mobility transistorsThesis Hochschulschrift2014