Waltl, Michael

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Waltl, Michael
 
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Date Issued:  [2000 TO 2024]
Subject:  Safety, Risk, Reliability and Quality

Results 1-10 of 10 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Wilhelmer, Christoph ; Waldhoer, Dominic ; Jech, Markus ; El-Sayed, Al-Moatasem Bellah ; Cvitkovich, Lukas ; Waltl, Michael ; Grasser, Tibor Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole captureArtikel Article 2022
2Tselios, Konstantinos ; Waldhör, Dominic ; Stampfer, Bernhard ; Michl, Jakob ; Ioannidis, Eleftherios ; Enichlmair, H. ; Grasser, Tibor ; Waltl, Michael On the Distribution of Single Defect Threshold Voltage Shifts in SiON TransistorsArtikel Article 2021
3Waltl, Michael ; Waldhoer, Dominic ; Tselios, Konstantinos ; Stampfer, Bernhard ; Schleich, Christian ; Rzepa, Gerhard ; Enichlmair, Hubert ; Ioannidis, Eleftherios G. ; Minixhofer, Rainer ; Grasser, Tibor Impact of Single-Defects on the Variability of CMOS Inverter CircuitsArtikel Article 2021
4Shah, Ambika Prasad ; Rossi, Daniele ; Sharma, Vishal ; Vishvakarma, Santosh Kumar ; Waltl, Michael Soft Error Hardening Enhancement Analysis of NBTI Tolerant Schmitt Trigger CircuitArtikel Article 2020
5Stampfer, Bernhard ; Simicic, Marko ; Weckx, Pieter ; Abbasi, Arash ; Kaczer, Ben ; Grasser, Tibor ; Waltl, Michael Extraction of Statistical Gate Oxide Parameters From Large MOSFET ArraysArtikel Article 2020
6Waltl, Michael Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS TransistorsArtikel Article 2020
7Waltl, Michael ; Stampfer, Bernhard ; Rzepa, Gerhard ; Kaczer, Ben ; Grasser, Tibor Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS TransistorsArtikel Article 2020
8Ullmann, B. ; Puschkarsky, K. ; Waltl, M. ; Reisinger, H. ; Grasser, T. Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement TechniquesArtikel Article 2019
9Kaczer, B. ; Franco, J. ; Weckx, P. ; Roussel, Ph.J. ; Putcha, V. ; Bury, E. ; Simicic, M. ; Chasin, A. ; Linten, D. ; Parvais, B. ; Catthoor, F. ; Rzepa, G. ; Waltl, M. ; Grasser, T. A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent VariabilityArtikel Article 2018
10Rzepa, G. ; Franco, J. ; O’Sullivan, B. ; Subirats, A. ; Simicic, M. ; Hellings, G. ; Weckx, P. ; Jech, M. ; Knobloch, T. ; Waltl, M. ; Roussel, P.J. ; Linten, D. ; Kaczer, B. ; Grasser, T. Comphy -- A Compact-Physics Framework for Unified Modeling of BTIArtikel Article 2018