Full name Familienname, Vorname
Pobegen, Gregor
 

Results 1-20 of 39 (Search time: 0.009 seconds).

PreviewAuthors / EditorsTitleTypeIssue Date
1Butej, Boris ; Padovan, Valeria ; Pogany, Dionyz ; Pobegen, Gregor ; Ostermaier, Clemens ; Koller, Christian Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time ConstantsArtikel Article 2022
2Ruch, Bernhard ; Jech, Markus ; Pobegen, Gregor ; Grasser, Tibor Applicability of Shockley-Read-Hall Theory for Interface StatesArtikel Article 2021
3Ruch, Bernhard ; Pobegen, Gregor ; Grasser, Tibor Localizing Hot-Carrier Degradation in Silicon Trench MOSFETsArtikel Article 2021
4Ruch, Bernhard ; Jech, Markus ; Pobegen, Gregor ; Grasser, Tibor Applicability of Shockley-Read-Hall Theory for Interface StatesKonferenzbeitrag Inproceedings 2020
5Vasilev, Alexander ; Jech, Markus ; Grill, Alexander ; Rzepa, Gerhard ; Schleich, Christian ; Makarov, Alexander ; Pobegen, Gregor ; Grasser, Tibor ; Waltl, Michael ; Tyaginov, Stanislav Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC TransistorsKonferenzbeitrag Inproceedings 2020
6Ruch, Bernhard ; Pobegen, Gregor ; Schleich, Christian ; Grasser, Tibor Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge PumpingKonferenzbeitrag Inproceedings 2020
7Berens, Judith ; Pobegen, Gregor ; Grasser, Tibor Tunneling Effects in NH₃ Annealed 4H-SiC Trench MOSFETsArtikel Article2020
8Ruch, Bernhard ; Pobegen, Gregor ; Grasser, Tibor Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge PumpingArtikel Article 2020
9Koller, Christian ; Pobegen, Gregor ; Ostermaier, Clemens ; Hecke, Gebhard ; Neumann, Richard ; Holzbauer, Martin ; Strasser, Gottfried ; Pogany, Dionyz Trap-Related Breakdown and Filamentary Conduction in Carbon Doped GaNArtikel Article2019
10Bernhard, Ruch ; Pobegen, Gregor ; Rösch, Maximilian ; Vytla, Rajeev Krishna ; Grasser, Tibor Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETsArtikel Article2019
11Berens, Judith ; Pobegen, Gregor ; Rescher, Gerald ; Aichinger, Thomas ; Grasser, Tibor NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and ReliabilityArtikel Article2019
12Berens, Judith ; Pobegen, Gregor ; Eichinger, Thomas ; Rescher, Gerald ; Grasser, Tibor Cryogenic Characterization of NH₃ Post Oxidation Annealed 4H-SiC Trench MOSFETsArtikel Article2019
13Koller, Christian ; Pobegen, Gregor ; Ostermaier, Clemens ; Pogany, Dionyz Effect of carbon doping on charging/discharging dynamics and leakage behavior of carbon-doped GaNArtikel Article2018
14Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement TechniqueArtikel Article2018
15Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device PreconditioningArtikel Article2018
16Ostermaier, Clemens ; Lagger, Peter Willibald ; Reiner, Maria ; Koller, Christian ; Pobegen, Gregor ; Pogany, Dionyz Dielectrics for GaN and GaN as dielectric: The role of interface and bulk defectsPräsentation Presentation2018
17Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping TechniqueArtikel Article2017
18Koller, Christian ; Pobegen, Gregor ; Ostermaier, C ; Huber, M. ; Pogany, Dionyz Transient capacitance analysis of thin carbon doped GaN layersPräsentation Presentation2017
19Ostermaier, C ; Lagger, Peter Willibald ; Reiner, Maria ; Grill, Alexander ; Stradiotto, Roberta ; Pobegen, Gregor ; Grasser, Tibor ; Pietschnig, R ; Pogany, Dionyz Review of bias-temperature instabilities at the III-N/dielectric interfacePräsentation Presentation2017
20Koller, Christian ; Pobegen, Gregor ; Ostermaier, C ; Huber, M. ; Pogany, Dionyz Leakage and voltage blocking behavior of carbon-doped GaN buffer layersPräsentation Presentation2017