| | Preview | Authors / Editors | Title | Type | Issue Date |
| 1 | | Butej, Boris ; Padovan, Valeria ; Pogany, Dionyz ; Pobegen, Gregor ; Ostermaier, Clemens ; Koller, Christian | Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time Constants | Artikel Article  | 2022 |
| 2 | | Ruch, Bernhard ; Jech, Markus ; Pobegen, Gregor ; Grasser, Tibor | Applicability of Shockley-Read-Hall Theory for Interface States | Artikel Article  | 2021 |
| 3 | | Ruch, Bernhard ; Pobegen, Gregor ; Grasser, Tibor | Localizing Hot-Carrier Degradation in Silicon Trench MOSFETs | Artikel Article  | 2021 |
| 4 | | Ruch, Bernhard ; Jech, Markus ; Pobegen, Gregor ; Grasser, Tibor | Applicability of Shockley-Read-Hall Theory for Interface States | Konferenzbeitrag Inproceedings  | 2020 |
| 5 | | Vasilev, Alexander ; Jech, Markus ; Grill, Alexander ; Rzepa, Gerhard ; Schleich, Christian ; Makarov, Alexander ; Pobegen, Gregor ; Grasser, Tibor ; Waltl, Michael ; Tyaginov, Stanislav | Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors | Konferenzbeitrag Inproceedings  | 2020 |
| 6 | | Ruch, Bernhard ; Pobegen, Gregor ; Schleich, Christian ; Grasser, Tibor | Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping | Konferenzbeitrag Inproceedings  | 2020 |
| 7 | | Berens, Judith ; Pobegen, Gregor ; Grasser, Tibor | Tunneling Effects in NH₃ Annealed 4H-SiC Trench MOSFETs | Artikel Article | 2020 |
| 8 | | Ruch, Bernhard ; Pobegen, Gregor ; Grasser, Tibor | Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge Pumping | Artikel Article  | 2020 |
| 9 | | Koller, Christian ; Pobegen, Gregor ; Ostermaier, Clemens ; Hecke, Gebhard ; Neumann, Richard ; Holzbauer, Martin ; Strasser, Gottfried ; Pogany, Dionyz | Trap-Related Breakdown and Filamentary Conduction in Carbon Doped GaN | Artikel Article | 2019 |
| 10 | | Bernhard, Ruch ; Pobegen, Gregor ; Rösch, Maximilian ; Vytla, Rajeev Krishna ; Grasser, Tibor | Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs | Artikel Article | 2019 |
| 11 | | Berens, Judith ; Pobegen, Gregor ; Rescher, Gerald ; Aichinger, Thomas ; Grasser, Tibor | NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and Reliability | Artikel Article | 2019 |
| 12 | | Berens, Judith ; Pobegen, Gregor ; Eichinger, Thomas ; Rescher, Gerald ; Grasser, Tibor | Cryogenic Characterization of NH₃ Post Oxidation Annealed 4H-SiC Trench MOSFETs | Artikel Article | 2019 |
| 13 | | Koller, Christian ; Pobegen, Gregor ; Ostermaier, Clemens ; Pogany, Dionyz | Effect of carbon doping on charging/discharging dynamics and leakage behavior of carbon-doped GaN | Artikel Article | 2018 |
| 14 | | Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor | Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique | Artikel Article | 2018 |
| 15 | | Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor | Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning | Artikel Article | 2018 |
| 16 | | Ostermaier, Clemens ; Lagger, Peter Willibald ; Reiner, Maria ; Koller, Christian ; Pobegen, Gregor ; Pogany, Dionyz | Dielectrics for GaN and GaN as dielectric: The role of interface and bulk defects | Präsentation Presentation | 2018 |
| 17 | | Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor | Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping Technique | Artikel Article | 2017 |
| 18 | | Koller, Christian ; Pobegen, Gregor ; Ostermaier, C ; Huber, M. ; Pogany, Dionyz | Transient capacitance analysis of thin carbon doped GaN layers | Präsentation Presentation | 2017 |
| 19 | | Ostermaier, C ; Lagger, Peter Willibald ; Reiner, Maria ; Grill, Alexander ; Stradiotto, Roberta ; Pobegen, Gregor ; Grasser, Tibor ; Pietschnig, R ; Pogany, Dionyz | Review of bias-temperature instabilities at the III-N/dielectric interface | Präsentation Presentation | 2017 |
| 20 | | Koller, Christian ; Pobegen, Gregor ; Ostermaier, C ; Huber, M. ; Pogany, Dionyz | Leakage and voltage blocking behavior of carbon-doped GaN buffer layers | Präsentation Presentation | 2017 |