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Pobegen, Gregor
 
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Results 1-20 of 40 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Podsednik-2023-SPECTROCHIMICA ACTA PART B-ATOMIC SPECTROSCOPY-vor.pdf.jpgPodsednik, Maximilian ; Weiss, Maximilian ; Larisegger, Silvia ; Frank, Johannes ; Pobegen, Gregor ; Nelhiebel, Michael ; Limbeck, Andreas Quantitative analysis of trace elements in technological materials using online-laser ablation of solids in liquids (online-LASIL)Article Artikel Jul-2023
2Butej, Boris ; Padovan, Valeria ; Pogany, Dionyz ; Pobegen, Gregor ; Ostermaier, Clemens ; Koller, Christian Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time ConstantsArtikel Article 2022
3Ruch, Bernhard ; Pobegen, Gregor ; Grasser, Tibor Localizing Hot-Carrier Degradation in Silicon Trench MOSFETsArtikel Article 2021
4Ruch, Bernhard ; Jech, Markus ; Pobegen, Gregor ; Grasser, Tibor Applicability of Shockley-Read-Hall Theory for Interface StatesArtikel Article 2021
5Berens, Judith Veronika ; Pobegen, Gregor ; Grasser, Tibor Tunneling Effects in NH₃ Annealed 4H-SiC Trench MOSFETsArtikel Article Jul-2020
6Vasilev, Alexander ; Jech, Markus ; Grill, Alexander ; Rzepa, Gerhard ; Schleich, Christian ; Makarov, Alexander ; Pobegen, Gregor ; Grasser, Tibor ; Waltl, Michael ; Tyaginov, Stanislav Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC TransistorsKonferenzbeitrag Inproceedings 2020
7Ruch, Bernhard ; Pobegen, Gregor ; Grasser, Tibor Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge PumpingArtikel Article 2020
8Ruch, Bernhard ; Jech, Markus ; Pobegen, Gregor ; Grasser, Tibor Applicability of Shockley-Read-Hall Theory for Interface StatesKonferenzbeitrag Inproceedings 2020
9Ruch, Bernhard ; Pobegen, Gregor ; Schleich, Christian ; Grasser, Tibor Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge PumpingKonferenzbeitrag Inproceedings 2020
10Bernhard, Ruch ; Pobegen, Gregor ; Rösch, Maximilian ; Vytla, Rajeev Krishna ; Grasser, Tibor Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETsArtikel Article 2019
11Berens, Judith ; Pobegen, Gregor ; Rescher, Gerald ; Aichinger, Thomas ; Grasser, Tibor NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and ReliabilityArtikel Article 2019
12Koller, Christian ; Pobegen, Gregor ; Ostermaier, Clemens ; Hecke, Gebhard ; Neumann, Richard ; Holzbauer, Martin ; Strasser, Gottfried ; Pogany, Dionyz Trap-Related Breakdown and Filamentary Conduction in Carbon Doped GaNArtikel Article 2019
13Berens, Judith ; Pobegen, Gregor ; Eichinger, Thomas ; Rescher, Gerald ; Grasser, Tibor Cryogenic Characterization of NH₃ Post Oxidation Annealed 4H-SiC Trench MOSFETsArtikel Article 2019
14Koller, Christian ; Pobegen, Gregor ; Ostermaier, Clemens ; Pogany, Dionyz Effect of carbon doping on charging/discharging dynamics and leakage behavior of carbon-doped GaNArtikel Article 2018
15Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement TechniqueArtikel Article 2018
16Ostermaier, Clemens ; Lagger, Peter Willibald ; Reiner, Maria ; Koller, Christian ; Pobegen, Gregor ; Pogany, Dionyz Dielectrics for GaN and GaN as dielectric: The role of interface and bulk defectsPräsentation Presentation2018
17Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device PreconditioningArtikel Article 2018
18Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Improved Interface Trap Density Close to the Conduction Band Edge of a-Face 4H-SiC MOSFETs Revealed Using the Charge Pumping TechniqueArtikel Article2017
19Stradiotto, Roberta ; Pobegen, Gregor ; Ostermaier, Clemens ; Waltl, Michael ; Grill, Alexander ; Grasser, Tibor Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTsArtikel Article 2017
20Koller, Christian ; Pobegen, Gregor ; Ostermaier, Clemens ; Huber, Martin ; Pogany, Dionyz The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layersArtikel Article 2017