Record link: 
http://hdl.handle.net/20.500.12708/141634
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Title: 
Tunneling Effects in NH₃ Annealed 4H-SiC Trench MOSFETs
en
Citation: 
Berens, J. V., Pobegen, G., & Grasser, T. (2020). Tunneling Effects in NH₃ Annealed 4H-SiC Trench MOSFETs. Materials Science Forum, 1004, 652–658. https://doi.org/10.4028/www.scientific.net/msf.1004.652
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Publisher DOI: 
10.4028/www.scientific.net/msf.1004.652
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Publication Type: 
Article - Original Research Article
en
Language: 
English
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Authors: 
Berens, Judith Veronika 
Pobegen, Gregor 
Grasser, Tibor 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Journal: 
Materials Science Forum 
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ISSN: 
0255-5476
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Date (published): 
Jul-2020
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Number of Pages: 
7
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Publisher: 
Trans Tech Publications Ltd.
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Peer reviewed: 
Yes
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Keywords: 
Mechanical Engineering; Mechanics of Materials; Condensed Matter Physics; General Materials Science
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Research Areas: 
Nanoelectronics: 100%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
Nanotechnologie
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Appears in Collections:
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