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Record link:
http://hdl.handle.net/20.500.12708/141634
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Title:
Tunneling Effects in NH₃ Annealed 4H-SiC Trench MOSFETs
en
Citation:
Berens, J. V., Pobegen, G., & Grasser, T. (2020). Tunneling Effects in NH₃ Annealed 4H-SiC Trench MOSFETs.
Materials Science Forum
,
1004
, 652–658. https://doi.org/10.4028/www.scientific.net/msf.1004.652
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Publisher DOI:
10.4028/www.scientific.net/msf.1004.652
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Publication Type:
Article - Original Research Article
en
Language:
English
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Authors:
Berens, Judith Veronika
Pobegen, Gregor
Grasser, Tibor
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Organisational Unit:
E360 - Institut für Mikroelektronik
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Journal:
Materials Science Forum
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ISSN:
0255-5476
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Date (published):
Jul-2020
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Number of Pages:
7
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Publisher:
Trans Tech Publications Ltd.
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Peer reviewed:
Yes
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Keywords:
Mechanical Engineering; Mechanics of Materials; Condensed Matter Physics; General Materials Science
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Research Areas:
Nanoelectronics: 100%
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Science Branch:
Elektrotechnik, Elektronik, Informationstechnik
Nanotechnologie
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Appears in Collections:
Article
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