Title Titel
Materials Science Forum
 
e-ISSN
1662-9752
 
ISSN
0255-5476
 
Publisher Herausgeber
Trans Tech Publications Ltd.
 
 
Peer reviewed Begutachtet
 
 
 

Publications Publikationen

Results 1-20 of 27 (Search time: 0.004 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Walter, Thomas ; Zareghomsheh, Mohammad ; Khatibi, Golta ; Danninger, Herbert Adhesion properties of thin film multilayers: Comparison of nanoindentation and four-point-bending techniquesArtikel Article 2021
2Schneider, Michael ; Stöber, Laura ; Konrath, Jens P. ; Patocka, Florian ; Schmid, Ulrich Argon bombardment of 4H silicon carbide substrates for tailored Schottky diode barrier heightsArtikel Article 2019
3Haubner-2026-Materials Science Forum-vor.pdf.jpgHaubner, Roland ; Strobl, Susanne A Bronze Button from Late Bronze Age Site of Inzersdorf ob der TraisenArticle Artikel 2026
4Strobl-2023-Materials Science Forum-vor.pdf.jpgStrobl, Susanne ; Haubner, Roland Characterisation of a San Mai Steel Composite for the Manufacture of KnivesArticle Artikel Mar-2023
5Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device PreconditioningArtikel Article 2018
6Haubner-2026-Materials Science Forum-vor.pdf.jpgHaubner, Roland ; Strobl, Susanne Copper Test Melts with Additions of Pb, Bi, As, Sb and SnArticle Artikel 2026
7Berens, Judith ; Pobegen, Gregor ; Eichinger, Thomas ; Rescher, Gerald ; Grasser, Tibor Cryogenic Characterization of NH₃ Post Oxidation Annealed 4H-SiC Trench MOSFETsArtikel Article 2019
8Haubner-2023-Materials Science Forum-vor.pdf.jpgHaubner, Roland ; Strobl, Susanne Direct Production of Tin Bronzes from Copper and CassiteriteArticle Artikel 24-Mar-2023
9Betzwar Kotas, Agnieszka Monika ; Khatibi, Golta ; Khodabakhshi, Farzad ; Steiger-Thirsfeld, Andreas High Cycle Fatigue Behaviour of Cu/Sn Intermetallic Compounds Prepared by Transient Liquid Phase Bonding ProcessArtikel Article Jan-2021
10Perazzi-2024-Materials Science Forum-vor.pdf.jpgPerazzi, Marco ; Leitgeb, Markus ; Vengattoor Raghu, Appu ; Zellner, Christopher ; Hahn, Rainer ; Kirnbauer, Alexander ; Schwarz, Sabine ; Pfusterschmied, Georg ; Schmid, Ulrich High-Temperature Reorganization Behavior of Single-Crystalline Porous 4H-SiC Thin FoilsArticle Artikel 2024
11Edtmaier, Christian How to Master Interfaces in MMCs with Reactive ConstituentsArtikel Article 2021
12Hernandez, Yoanlys ; Schleich, Christian ; Stampfer, Bernhard ; Grasser, Tibor ; Waltl, Michael Impact of Bias Temperature Instabilities on the Performance of Power Electronics Employing SiC MOSFETsArticle Artikel 1-Jun-2023
13Hojati, Milad ; Gierl-Mayer, Christian ; Danninger, Herbert Iron-carbon masteralloy as sintering activator for low alloy powder metallurgy steelsArtikel Article 2021
14Schleich, Christian ; Feil, Maximilian Wolfgang ; Waldhör, Dominic ; Vasilev, Alexander ; Grasser, Tibor ; Waltl, Michael Lifetime Projection of Bipolar Operation of SiC DMOSFETArticle Artikel 1-Jun-2023
15Šimonka, Vito ; Hössinger, Andreas ; Weinbub, Josef ; Selberherr, Siegfried Modeling and Simulation of Electrical Activation of Acceptor-Type Dopants in Silicon CarbideArtikel Article 2018
16Lederer, Martin ; Walter, Thomas ; Khatibi, Golta Modelling of Cyclic Delamination Behavior of Thin Multilayered Structures Using Gradient Elasticity and Damage AccumulationArtikel Article Jan-2021
17Wahid-2024-Materials Science Forum-vor.pdf.jpgWahid, Shan Nizam ; Leitgeb, Markus ; Pfusterschmied, Georg ; Schmid, Ulrich A Novel Approach for Thin 4H-SiC Foil Realization Using Controlled Spalling from a 4H-SiC WaferArticle Artikel 21-Aug-2024
18Vasilev, Aleksandr ; Feil, Maximilian Wolfgang ; Schleich, Christian ; Stampfer, Bernhard ; Rzepa, Gerhard ; Pobegen, Gregor ; Grasser, Tibor ; Waltl, Michael Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD SimulationsArticle Artikel 31-May-2023
19Waltl, Michael ; Hernandez Barrios, Yoanlys ; Schleich, Christian ; Waschneck, Katja ; Stampfer, Bernhard ; Reisinger, Hans ; Grasser, Tibor Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping ModelsArtikel Article 2022
20Waltl, Michael ; Schleich, Christian ; Vasilev, Alexander ; Waldhör, Dominic ; Stampfer, Bernhard ; Grasser, Tibor Physical Modelling of Charge Trapping Effects in SiC MOSFETsArticle Artikel 1-Jun-2023