Notice
This item was automatically migrated from a legacy system. It's data has not been checked and might not meet the quality criteria of the present system.
Record link: 
http://hdl.handle.net/20.500.12708/144058
-
Title: 
Argon bombardment of 4H silicon carbide substrates for tailored Schottky diode barrier heights
-
Citation: 
Schneider, M., Stöber, L., Konrath, J. P., Patocka, F., & Schmid, U. (2019). Argon bombardment of 4H silicon carbide substrates for tailored Schottky diode barrier heights. Materials Science Forum, 963, 506–510. https://doi.org/10.4028/www.scientific.net/msf.963.506
-
Publisher DOI: 
10.4028/www.scientific.net/msf.963.506
-
Publication Type: 
Article - Original Research Article
en
Authors: 
Schneider, Michael 
Stöber, Laura 
Konrath, Jens P. 
Patocka, Florian 
Schmid, Ulrich 
-
Organisational Unit: 
E366-02 - Forschungsbereich Mikrosystemtechnik 
-
Journal: 
Materials Science Forum 
-
ISSN: 
0255-5476
-
Date (published): 
2019
-
Number of Pages: 
5
-
Publisher: 
Trans Tech Publications Ltd.
-
Peer reviewed: 
Yes
-
Keywords: 
Mechanical Engineering; Mechanics of Materials; Condensed Matter Physics; General Materials Science
-
Abstract: 
In this paper, the impact of substrate preconditioning by ion bombardment in-situ in a conventional sputter equipment on n-doped 4H-silicon carbide (SiC) Schottky diodes with molybdenum nitride metallization is studied. By variation of the plasma power during argon ion bombardment, the effective barrier height is adjustable in the range from 0.66 to 0.96 eV, as deduced by current / voltage measurements over a wide temperature range. Therefore, this approach offers a straightforward method to tailor the Schottky barrier height over a significant range by introducing an insitu substrate pretreatment step available in most sputter equipment.
en
Research Areas: 
Materials Characterization: 20%
Special and Engineering Materials: 35%
Sensor Systems: 45%
-
Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
-
Appears in Collections:
Article

Show full item record

Page view(s)

69
checked on Dec 1, 2023

Google ScholarTM

Check