Schleich, C., Feil, M. W., Waldhör, D., Vasilev, A., Grasser, T., & Waltl, M. (2023). Lifetime Projection of Bipolar Operation of SiC DMOSFET. Materials Science Forum, 1091, 73–77. https://doi.org/10.4028/p-9i494d
Bias Temperature Instabilities; Charge Trapping; Non-Radiative Multi-Phonon Model
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Abstract:
We show the superior threshold voltage Vth and on resistance Ron stability of a SiC DMOS technologyatbipolargate-driveoperation.Therefore,thedefectparametersofatwo-statenon-radiative multi-phonon model to capture the charge trapping kinetics of oxide and interface defects is calibrated within our simulation framework Comphy by data extracted from measure-stress-measure (MSM) sequences. An extrapolation of the device degradation at operating conditions renders bias temperature instabilities (BTI) a minor threat to on-state loss increase.
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Project title:
CD-Labor für Einzeldefektspektroskopie in Halbleiterbauelementen: 00000000 (Christian Doppler Forschungsgesells)
