<div class="csl-bib-body">
<div class="csl-entry">Schleich, C., Feil, M. W., Waldhör, D., Vasilev, A., Grasser, T., & Waltl, M. (2023). Lifetime Projection of Bipolar Operation of SiC DMOSFET. <i>Materials Science Forum</i>, <i>1091</i>, 73–77. https://doi.org/10.4028/p-9i494d</div>
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dc.identifier.issn
0255-5476
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/207884
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dc.description.abstract
We show the superior threshold voltage Vth and on resistance Ron stability of a SiC DMOS technologyatbipolargate-driveoperation.Therefore,thedefectparametersofatwo-statenon-radiative multi-phonon model to capture the charge trapping kinetics of oxide and interface defects is calibrated within our simulation framework Comphy by data extracted from measure-stress-measure (MSM) sequences. An extrapolation of the device degradation at operating conditions renders bias temperature instabilities (BTI) a minor threat to on-state loss increase.
en
dc.description.sponsorship
Christian Doppler Forschungsgesells
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dc.language.iso
en
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dc.publisher
Trans Tech Publications Ltd.
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dc.relation.ispartof
Materials Science Forum
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dc.subject
Bias Temperature Instabilities
en
dc.subject
Charge Trapping
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dc.subject
Non-Radiative Multi-Phonon Model
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dc.title
Lifetime Projection of Bipolar Operation of SiC DMOSFET
