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| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Mounir, Ahmed ; Lime, Francois ; Kloes, Alexander ; Provias, Alexandros ; Knobloch, Theresia ; O'Brien, K. P. ; Grasser, Tibor ; Iniguez, Benjamin | Compact I-V Model for Double-Gated MoS₂ FETs Including Short-Channel Effects | Article Artikel  | Dec-2025 |
| 2 | | Mounir, Ahmed ; Lime, François ; Kloes, Alexander ; Provias, Alexandros ; Knobloch, Theresia ; O'Brien, K.P. ; Grasser, Tibor ; Iñiguez, Benjamin | A Physics-Based Compact I-V Model for Short-Channel MoS₂ FETs | Inproceedings Konferenzbeitrag | 5-Aug-2025 |
| 3 | | Feil, Maximilian W. ; Weger, M. ; Reisinger, Hans ; Aichinger, Thomas ; Kabakow, André ; Waldhör, Dominic ; Jakowetz, Andreas C. ; Prigann, Sven ; Pobegen, Gregor ; Gustin, Wolfgang ; Waltl, Michael ; Bockstedte, Michel ; Grasser, Tibor | Time-gated optical spectroscopy of field-effect-stimulated recombination via interfacial point defects in fully processed silicon carbide power MOSFETs | Article Artikel | 30-Aug-2024 |
| 4 | | Wilhelmer, Christoph ; Waldhör, Dominic ; Cvitkovich, Lukas ; Milardovich, Diego ; Waltl, Michael ; Grasser, Tibor | Polaron formation in the hydrogenated amorphous silicon nitride Si₃N₄ : H | Article Artikel | 1-Jul-2024 |
| 5 | | Feil, Maximilian ; Waschneck, Katja ; Reisinger, Hans ; Berens, Judith ; Aichinger, Thomas ; Prigann, Sven ; Pobegen, Gregor ; Salmen, Paul ; Rescher, Gerald ; Waldhör, Dominic ; Vasilev, Alexander ; Gustin, Wolfgang ; Waltl, Michael ; Grasser, Tibor | Gate Switching Instability in Silicon Carbide MOSFETs—Part I: Experimental | Article Artikel | Jul-2024 |
| 6 | | Grasser, Tibor ; Feil, Maximilian Wolfgang ; Waschneck, Katja ; Reisinger, Hans ; Berens, Judith ; Waldhör, Dominic ; Vasilev, Alexander ; Waltl, Michael ; Aichinger, Thomas ; Bockstedte, Michel ; Gustin, Wolfgang ; Pobegen, Gregor | Gate Switching Instability in Silicon Carbide MOSFETs—Part II: Modeling | Article Artikel | Jul-2024 |
| 7 | | Waltl, Michael ; Stampfer, Bernhard ; Grasser, Tibor | Extraction of Charge Trapping Kinetics of Defects From Single-Defect Measurements | Article Artikel | Jun-2024 |
| 8 | | Stampfer, Paul ; Roger, Frederic ; Cvitkovich, Lukas ; Grasser, Tibor ; Waltl, Michael | A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes | Article Artikel | Jun-2024 |
| 9 | | Illarionov, Yu. Yu. ; Knobloch, Theresia ; Uzlu, Burkay ; Banshchikov, Alexander ; Ivanov, I. A. ; Sverdlov, Viktor ; Otto, Martin ; Stoll, S. L. ; Vexler, Mikhail ; Waltl, Michael ; Wang, Z. ; Manna, Bibhas ; Neumaier, Daniel ; Lemme, Max ; Sokolov, N. S. ; Grasser, Tibor | Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF₂ insulators | Article Artikel | 19-Mar-2024 |
| 10 | | Ruch, Bernhard ; Padovan, Valeria ; Pogany, Dionyz ; Ostermaier, Clemens ; Butej, Boris ; Koller, Christian ; Waltl, Michael | Influence of Hole Injection on Associated Recovery Phenomena in GaN-Based GITs Subjected to Hot Electron Trapping | Inproceedings Konferenzbeitrag | 2024 |
| 11 | | Waltl, Michael ; Stampfer, Bernhard ; Grasser, Tibor | Advanced Extraction of Trap Parameters from Single-Defect Measurements | Inproceedings Konferenzbeitrag | 2024 |
| 12 | | Grasser, Tibor ; Feil, Maximilian ; Waschneck, Katja ; Reisinger, Hans ; Berens, Judith ; Waldhör, Dominic ; Vasilev, Alexander ; Waltl, Michael ; Aichinger, Thomas ; Bockstedte, Michel ; Gustin, Wolfgang ; Pobegen, Gregor | A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs | Inproceedings Konferenzbeitrag | 2024 |
| 13 | | Loesener, Martin ; Zinsler, Tobias ; Stampfer, Bernhard ; Wimmer, Florian ; Ioannidis, Eleftherios ; Monga, Udit ; Pflanzl, Walter ; Minixhofer, Rainer ; Grasser, Tibor ; Waltl, Michael | Evaluation of the Robustness of the Defect-Centric Model for Defect Parameter Extraction from RTN Analysis | Inproceedings Konferenzbeitrag | 2024 |
| 14 | | Wilhelmer, Christoph ; Waldhör, Dominic ; Milardovich, Diego ; Cvitkovich, Lukas ; Waltl, Michael ; Grasser, Tibor | Intrinsic Electron Trapping in Amorphous Silicon Nitride (a-Si3N4:H) | Inproceedings Konferenzbeitrag | 20-Nov-2023 |
| 15 | | Stampfer, Paul ; Roger, Frederic ; Grasser, Tibor ; Waltl, Michael | Impact of Trap States at Deep Trench Sidewalls on the Responsivity of Island Photodiodes | Article Artikel | Nov-2023 |
| 16 | | Tselios, Konstantinos ; Knobloch, Theresia ; Waldhör, Dominic ; Stampfer, Bernhard ; Ioannidis , Eleftherios ; Enichlmair , Hubert ; Minixhofer , Rainer ; Grasser, Tibor ; Waltl, Michael | Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO₂ Transistors | Article Artikel | Sep-2023 |
| 17 | | Stampfer, Paul ; Stampfer, Bernhard ; Grasser, Tibor ; Waltl, Michael | Accurate Extraction of Minority Carrier Lifetimes—Part I: Transient Methods | Article Artikel | 1-Aug-2023 |
| 18 | | Stampfer, Paul ; Stampfer, Bernhard ; Grasser, Tibor ; Waltl, Michael | Accurate Extraction of Minority Carrier Lifetimes—Part II: Combined I–V C–V Methods | Article Artikel | Aug-2023 |
| 19 | | Wilhelmer, Christoph ; Waldhör, Dominic ; Cvitkovich, Lukas ; Waltl, Michael ; Grasser, Tibor | Ab initio investigations of electron and hole trapping processes of H induced defects in amorphous SiO₂ | Inproceedings Konferenzbeitrag | 12-Jun-2023 |
| 20 | | Waltl, Michael ; Schleich, Christian ; Vasilev, Alexander ; Waldhör, Dominic ; Stampfer, Bernhard ; Grasser, Tibor | Physical Modelling of Charge Trapping Effects in SiC MOSFETs | Article Artikel | 1-Jun-2023 |
