Compact I-V Model for Double-Gated MoS₂ FETs Including Short-Channel Effects

Abstract

This article presents a physics-based analytical compact model for double-gated molybdenum disulfide (MoS₂) field effect transistors (FETs), incorporating key physical and short-channel effects (SCEs), such as mobility degradation and velocity saturation. The model is developed from a unified charge control model by evaluating the charge density within the 2-D MoS₂ layer, represented using the Lambert W function, which provides an analytical expression valid and continuous from the subthreshold to the above threshold regime. The drain current is then derived from this unified charge control model, and as a function of closed-form equations for the charge densities at the source and drain ends of the channel. Despite its simplicity, the model shows excellent agreement with experimental data for channel lengths down to 60 nm, making it a powerful tool for accurately predicting the performance of downscaled devices. By including SCEs, this work extends previous modeling efforts and provides a more comprehensive framework for the simulation and optimization of 2-D material-based FETs in circuit design.