Wilhelmer, C., Waldhör, D., Cvitkovich, L., Waltl, M., & Grasser, T. (2023). Ab initio investigations of electron and hole trapping processes of H induced defects in amorphous SiO₂. In The 14th International Conference on SiO₂, Dielectrics and Related Devices : Book of Abstracts (pp. 18–19).
The 14th International Conference on SiO₂, Dielectrics and Related Devices : Book of Abstracts
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Date (published):
12-Jun-2023
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Event name:
The 14th International conference on SiO2, advanced dielectrics and related devices
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Event date:
12-Jun-2023 - 14-Jun-2023
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Event place:
Palermo, Italy
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Number of Pages:
2
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Keywords:
Ab initio studies in amorphous SiO2; Nonradiative multi-phonon defect model; Hydroxyl-E′ center; Electron/hole traps; Metastability of defects; MOSFET; Bias temperature instability; Random telegraph noise
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Research facilities:
Vienna Scientific Cluster
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Project title:
CD-Labor für Einzeldefektspektroskopie in Halbleiterbauelementen: 00000000 (Christian Doppler Forschungsgesells)
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Research Areas:
Quantum Modeling and Simulation: 50% Computational Materials Science: 50%
