Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time Constants

Butej, Boris; Padovan, Valeria; Pogany, Dionyz; Pobegen, Gregor; Ostermaier, Clemens; Koller, Christian

doi:10.1109/ted.2022.3170293

Record link:

http://hdl.handle.net/20.500.12708/136860

Title:

Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time Constants

Citation:

Butej, B., Padovan, V., Pogany, D., Pobegen, G., Ostermaier, C., & Koller, C. (2022). Method to Distinguish Between Buffer and Surface Trapping in Stressed Normally-ON GaN GITs Using the Gate-Voltage Dependence of Recovery Time Constants. IEEE Transactions on Electron Devices, 69(6), 3087–3093. https://doi.org/10.1109/ted.2022.3170293

Publisher DOI:

10.1109/ted.2022.3170293

Publication Type:

Article - Original Research Article

Language:

English

Authors:

Butej, Boris
Padovan, Valeria
Pogany, Dionyz
Pobegen, Gregor
Ostermaier, Clemens
Koller, Christian

Organisational Unit:

E362 - Institut für Festkörperelektronik

Journal:

IEEE Transactions on Electron Devices

ISSN:

0018-9383

Date (published):

2022

Number of Pages:

Publisher:

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Peer reviewed:

Yes

Keywords:

Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials

Research Areas:

Surfaces and Interfaces: 50%
Materials Characterization: 50%

Science Branch:

Elektrotechnik, Elektronik, Informationstechnik
Physik, Astronomie

Appears in Collections:

Article

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