Name Card

Full name Familienname, Vorname
Kuzmik, Jan
 
Main Affiliation Organisations­zuordnung
 

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Results 1-20 of 123 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Kuzmik, J. ; Fleury, C. ; Adikimenakis, A. ; Gregušová, D. ; Ťapajna, M. ; Dobročka, E. ; Haščík, Š. ; Kučera, M. ; Kúdela, R. ; Androulidaki, M. ; Pogany, D. ; Georgakilas, A. Current conduction mechanism and electrical break-down in InN grown on GaNArtikel Article 2017
2Tapajna, Milan ; Killat, Nicole ; Palankovski, Vassil ; Gregusova, Dagmar ; Cico, Karol ; Carlin, Jean-Francois ; Grandjean, Nicolas ; Kuball, Martin ; Kuzmik, Jan Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility TransistorsArtikel Article 2014
3Kohn, Erhard ; Alomari, M ; Gao, Z. ; Rossi, S ; Dussaigne, A ; Carlin, J.-F ; Grandjean, Nicolas ; Aretouli, K.E. ; Adikimenakis, A ; Konstantinidis, G. ; Georgakilas, A ; Zhang, Y ; Weaver, J ; Calvo, J. A. ; Kuball, M. ; Bychikhin, Sergey ; Kuzmik, J. ; Pogany, Dionyz ; Toth, L. ; Pecz, B ; Kovacs, A. Direct Interpretation of Diamond Heat Spreader with GaN-Based HEMT Device StructuresKonferenzbeitrag Inproceedings2014
4Molnar, Marian ; Palankovski, Vassil ; Donoval, D ; Kuzmik, J. ; Kovac, J ; Chvala, A ; Marek, J ; Pribytny, P. ; Selberherr, Siegfried Modeling and Characterization of InAlN/GaN HEMTs at Elevated TemperaturesKonferenzbeitrag Inproceedings2013
5Molnar, Marian ; Palankovski, Vassil ; Donoval, D ; Kuzmik, J. ; Kovac, J ; Chvala, A ; Marek, J ; Pribytny, P. ; Selberherr, Siegfried Characterization of InAlN/GaN HEMTs at Elevated Temperatures Supported by Numerical SimulationKonferenzbeitrag Inproceedings2013
6Jurkovic, M. ; Gregusova, D. ; Palankovski, V. ; Hascik, Stefan ; Blaho, M. ; Cico, K. ; Frohlich, K. ; Carlin, J. ; Grandjean, N. ; Kuzmik, J. Schottky-Barrier Normally Off GaN/InAlN/AlN/GaN HEMT With Selectively Etched Access RegionArtikel Article 2013
7Čičo, K. ; Gregušová, D. ; Kuzmík, J. ; Jurkovič, M. ; Alexewicz, A. ; di Forte Poisson, M.-A. ; Pogany, D. ; Strasser, G. ; Delage, S. ; Fröhlich, K. Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivationArtikel Article2012
8Kuzmik, Jan ; Vitanov, Stanislav ; Dua, Christian ; Carlin, Jean-Francois ; Ostermaier, Clemens ; Alexewicz, Alexander ; Strasser, Gottfried ; Pogany, Dionyz ; Gornik, Erich ; Grandjean, Nicolas ; Delage, Sylvain ; Palankovski, Vassil Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility TransistorsArtikel Article2012
9Palankovski, Vassil ; Kuzmik, J. A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency ApplicationsKonferenzbeitrag Inproceedings2012
10Molnar, Marian ; Donnarumma, Gesualdo ; Palankovski, Vassil ; Kuzmik, Jan ; Donoval, Daniel ; Kovac, Jaroslav ; Selberherr, Siegfried Electrothermal analysis of In<inf>0.12</inf>Al<inf>0.88</inf>N/GaN HEMTsKonferenzbeitrag Inproceedings2012
11Palankovski, Vassil ; Kuzmik, J. Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional SimulationKonferenzbeitrag Inproceedings2012
12Molnar, Marian ; Donnarumma, Gesualdo ; Palankovski, Vassil ; Kuzmik, J. ; Donoval, D ; Kovac, J ; Selberherr, Siegfried Characterization, Modeling and Simulation of In0.12Al0.88N/GaN HEMTsKonferenzbeitrag Inproceedings 2012
13Alexewicz, Alexander ; Behmenburg, H ; Giesen, C. ; Heuken, M ; Bychikhin, Sergey ; Kuzmik, J. ; Strasser, Gottfried ; Pogany, Dionyz Thermal analysis and simulation of InAlGaN/AlN GaN HEMTS on Si-Diamond-Si SubstratesKonferenzbeitrag Inproceedings2012
14Jurkovic, M ; Gregusova, Dagmar ; Hascik, S. ; Blaho, M. ; Molnar, Marian ; Palankovski, Vassil ; Donoval, D ; Carlin, J.-F ; Grandjean, Nicolas ; Kuzmik, J. GaN/InAlN/AlN/GaN Normally-Off HEMT with Etched Access RegionKonferenzbeitrag Inproceedings2012
15Jurkovic, M ; Gregusova, Dagmar ; Hascik, S. ; Blaho, M. ; Cico, Karol ; Palankovski, Vassil ; Carlin, J.-F ; Grandjean, Nicolas ; Kuzmik, Jan Polarization Engineered Normally-Off GaN/InlN/AlN/GaN HEMTKonferenzbeitrag Inproceedings2012
16Palankovski, Vassil ; Donnarumma, Gesualdo ; Kuzmik, Jan Degradation Study of Single and Double-Heterojunction InAlN/GaN HEMTs by Two-Dimensional SimulationBuchbeitrag Book Contribution2012
17Palankovski, Vassil ; Kuzmik, Jan A Promising New n<sup>++</sup>-GaN/InAlN/GaN HEMT Concept for High-Frequency ApplicationsBuchbeitrag Book Contribution2012
18Kuzmik, Jan ; Bychikhin, Sergey ; Pogany, Dionyz ; Pichonat, Emmanuelle ; Lancry, O ; Gaquière, Christophe ; Tsiakatouras, G ; Deligeorgis, G. ; Georgakilas, Alexandros Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamondArtikel Article 27-Apr-2011
19Čičo, K. ; Hušeková, K. ; Ťapajna, M. ; Gregušová, D. ; Stoklas, R. ; Kuzmík, J. ; Carlin, J.-F. ; Grandjean, N. ; Pogany, D. ; Fröhlich, K. Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectricsArtikel Article2011
20Ostermaier, Clemens ; Pozzovivo, Gianmauro ; Carlin, Jean-François ; Basnar, Bernhard ; Schrenk, Werner ; Andrews, Aaron Maxwell ; Douvry, Yannick ; Gaquière, Christophe ; De Jaeger, Jean-Claude ; Toth, L. ; Pecz, B ; Gonschorek, Marcus ; Feltin, Eric ; Grandjean, Nicolas ; Strasser, Gottfried ; Pogany, Dionyz ; Kuzmik, Jan Improvements of High Performance 2-nm-thin InAlN/AlN Barrier Devices by Interface EngineeringArtikel Article2011