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| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Stampfer, Bernhard ; Schanovsky, Franz ; Grasser, Tibor ; Waltl, Michael | Semi-Automated Extraction of the Distribution of Single Defects for nMOS Transistors | Artikel Article  | 23-Apr-2020 |
| 2 | | Grasser, Tibor ; Stampfer, Bernhard ; Waltl, Michael ; Rzepa, Gerhard ; Rupp, Karl ; Schanovsky, Franz ; Pobegen, G. ; Puschkarsky, Katja ; Reisinger, H. ; O´Sullivan, B. J. ; Kaczer, Ben | Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS Transistors | Konferenzbeitrag Inproceedings | 2018 |
| 3 | | Knobloch, Theresia ; Rzepa, Gerhard ; Illarionov, Yury ; Waltl, Michael ; Schanovsky, Franz ; Jech, Markus ; Stampfer, Bernhard ; Furchi, Marco Mercurio ; Müller, Thomas ; Grasser, Tibor | Physical modeling of the hysteresis in M0S2 transistors | Konferenzbeitrag Inproceedings | 2017 |
| 4 | | Karner, M ; Baumgartner, Oskar ; Stanojevic, Zlatan ; Schanovsky, Franz ; Strof, G ; Kernstock, Christian ; Karner, H.W. ; Rzepa, Gerhard ; Grasser, Tibor | Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulations | Konferenzbeitrag Inproceedings | 2016 |
| 5 | | Grasser, Tibor ; Rott, Karina ; Reisinger, Hans ; Waltl, Michael ; Schanovsky, Franz ; Kaczer, Ben | NBTI in Nanoscale MOSFETs-The Ultimate Modeling Benchmark | Artikel Article | 2014 |
| 6 | | Grasser, T. ; Goes, W. ; Wimmer, Y. ; Schanovsky, F. ; Rzepa, G. ; Waltl, M. ; Rott, K. ; Reisinger, H. ; Afanas'ev, V.V. ; Stesmans, A. ; El-Sayed, Al-Moatasem Bellah ; Shluger, A.L. | On the microscopic structure of hole traps in pMOSFETs | Konferenzbeitrag Inproceedings | 2014 |
| 7 | | Grasser, Tibor ; Rott, K. ; Reisinger, H. ; Wagner, Paul-Jürgen ; Gös, Wolfgang ; Schanovsky, Franz ; Waltl, Michael ; Toledano-Luque, M. ; Kaczer, Ben | Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect Spectroscopy | Konferenzbeitrag Inproceedings | 2013 |
| 8 | | Gös, Wolfgang ; Toledano-Luque, M. ; Baumgartner, Oskar ; Schanovsky, Franz ; Kaczer, Ben ; Grasser, Tibor | A Comprehensive Model for Correlated Drain and Gate Current Fluctuations | Konferenzbeitrag Inproceedings | 2013 |
| 9 | | Grasser, T. ; Rott, K. ; Reisinger, H. ; Waltl, M. ; Wagner, P. ; Schanovsky, F. ; Goes, W. ; Pobegen, G. ; Kaczer, B. | Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTI | Konferenzbeitrag Inproceedings | 2013 |
| 10 | | Grasser, Tibor ; Rott, K. ; Reisinger, H. ; Waltl, Michael ; Schanovsky, Franz ; Gös, Wolfgang ; Kaczer, Ben | Recent Advances in Understanding Oxide Traps in pMOS Transistors | Konferenzbeitrag Inproceedings | 2013 |
| 11 | | Gös, Wolfgang ; Toledano-Luque, M. ; Baumgartner, Oskar ; Bina, Markus ; Schanovsky, Franz ; Kaczer, Ben ; Grasser, Tibor | Understanding Correlated Drain and Gate Current Fluctuations | Konferenzbeitrag Inproceedings | 2013 |
| 12 | | Gös, Wolfgang ; Toledano-Luque, M. ; Baumgartner, Oskar ; Bina, Markus ; Schanovsky, Franz ; Kaczer, Ben ; Grasser, Tibor | Understanding Correlated Drain and Gate Current Fluctuations | Konferenzbeitrag Inproceedings | 2013 |
| 13 | | Goes, Wolfgang ; Toledano-Luque, Maria ; Schanovsky, Franz ; Bina, Markus ; Baumgartner, Oskar ; Kaczer, Ben ; Grasser, Tibor | (Invited) Multiphonon Processes as the Origin of Reliability Issues | Konferenzbeitrag Inproceedings | 2013 |
| 14 | | Schanovsky, F. ; Baumgartner, O. ; Goes, W. ; Grasser, T. | A detailed evaluation of model defects as candidates for the bias temperature instability | Konferenzbeitrag Inproceedings | 2013 |
| 15 | | Schanovsky, F. ; Goes, W. ; Grasser, T. | Advanced modeling of charge trapping at oxide defects | Konferenzbeitrag Inproceedings | 2013 |
| 16 | | Baumgartner, O. ; Bina, M. ; Goes, W. ; Schanovsky, F. ; Toledano-Luque, M. ; Kaczer, B. ; Kosina, H. ; Grasser, T. | Direct tunneling and gate current fluctuations | Konferenzbeitrag Inproceedings | 2013 |
| 17 |  | Schanovsky, Franz | Atomistic modeling in the context of the bias temperature instability | Thesis Hochschulschrift   | 2013 |
| 18 | | Goes, Wolfgang ; Schanovsky, Franz ; Grasser, Tibor | Advanced Modeling of Oxide Defects | Buchbeitrag Book Contribution | 2013 |
| 19 | | Schanovsky, Franz ; Grasser, Tibor | On the Microscopic Limit of the RD Model | Buchbeitrag Book Contribution | 2013 |
| 20 | | Schanovsky, F. ; Baumgartner, O. ; Sverdlov, V. ; Grasser, T. | A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS Structures | Artikel Article | 2012 |