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Full name Familienname, Vorname
Schanovsky, Franz
 
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Own Publications Eigene Publikationen

Results 1-20 of 47 (Search time: 0.004 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Stampfer, Bernhard ; Schanovsky, Franz ; Grasser, Tibor ; Waltl, Michael Semi-Automated Extraction of the Distribution of Single Defects for nMOS TransistorsArtikel Article 23-Apr-2020
2Grasser, Tibor ; Stampfer, Bernhard ; Waltl, Michael ; Rzepa, Gerhard ; Rupp, Karl ; Schanovsky, Franz ; Pobegen, G. ; Puschkarsky, Katja ; Reisinger, H. ; O´Sullivan, B. J. ; Kaczer, Ben Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS TransistorsKonferenzbeitrag Inproceedings 2018
3Knobloch, Theresia ; Rzepa, Gerhard ; Illarionov, Yury ; Waltl, Michael ; Schanovsky, Franz ; Jech, Markus ; Stampfer, Bernhard ; Furchi, Marco Mercurio ; Müller, Thomas ; Grasser, Tibor Physical modeling of the hysteresis in M0S2 transistorsKonferenzbeitrag Inproceedings 2017
4Karner, M ; Baumgartner, Oskar ; Stanojevic, Zlatan ; Schanovsky, Franz ; Strof, G ; Kernstock, Christian ; Karner, H.W. ; Rzepa, Gerhard ; Grasser, Tibor Vertically stacked nanowire MOSFETs for sub-10nm nodes: Advanced topography, device, variability, and reliability simulationsKonferenzbeitrag Inproceedings 2016
5Grasser, Tibor ; Rott, Karina ; Reisinger, Hans ; Waltl, Michael ; Schanovsky, Franz ; Kaczer, Ben NBTI in Nanoscale MOSFETs-The Ultimate Modeling BenchmarkArtikel Article2014
6Grasser, T. ; Goes, W. ; Wimmer, Y. ; Schanovsky, F. ; Rzepa, G. ; Waltl, M. ; Rott, K. ; Reisinger, H. ; Afanas'ev, V.V. ; Stesmans, A. ; El-Sayed, Al-Moatasem Bellah ; Shluger, A.L. On the microscopic structure of hole traps in pMOSFETsKonferenzbeitrag Inproceedings2014
7Grasser, Tibor ; Rott, K. ; Reisinger, H. ; Wagner, Paul-Jürgen ; Gös, Wolfgang ; Schanovsky, Franz ; Waltl, Michael ; Toledano-Luque, M. ; Kaczer, Ben Advanced Characterization of Oxide Traps: The Dynamic Time-Dependent Defect SpectroscopyKonferenzbeitrag Inproceedings2013
8Gös, Wolfgang ; Toledano-Luque, M. ; Baumgartner, Oskar ; Schanovsky, Franz ; Kaczer, Ben ; Grasser, Tibor A Comprehensive Model for Correlated Drain and Gate Current FluctuationsKonferenzbeitrag Inproceedings 2013
9Grasser, T. ; Rott, K. ; Reisinger, H. ; Waltl, M. ; Wagner, P. ; Schanovsky, F. ; Goes, W. ; Pobegen, G. ; Kaczer, B. Hydrogen-related volatile defects as the possible cause for the recoverable component of NBTIKonferenzbeitrag Inproceedings2013
10Grasser, Tibor ; Rott, K. ; Reisinger, H. ; Waltl, Michael ; Schanovsky, Franz ; Gös, Wolfgang ; Kaczer, Ben Recent Advances in Understanding Oxide Traps in pMOS TransistorsKonferenzbeitrag Inproceedings 2013
11Gös, Wolfgang ; Toledano-Luque, M. ; Baumgartner, Oskar ; Bina, Markus ; Schanovsky, Franz ; Kaczer, Ben ; Grasser, Tibor Understanding Correlated Drain and Gate Current FluctuationsKonferenzbeitrag Inproceedings2013
12Gös, Wolfgang ; Toledano-Luque, M. ; Baumgartner, Oskar ; Bina, Markus ; Schanovsky, Franz ; Kaczer, Ben ; Grasser, Tibor Understanding Correlated Drain and Gate Current FluctuationsKonferenzbeitrag Inproceedings2013
13Goes, Wolfgang ; Toledano-Luque, Maria ; Schanovsky, Franz ; Bina, Markus ; Baumgartner, Oskar ; Kaczer, Ben ; Grasser, Tibor (Invited) Multiphonon Processes as the Origin of Reliability IssuesKonferenzbeitrag Inproceedings2013
14Schanovsky Franz - 2013 - Atomistic modeling in the context of the bias...pdf.jpgSchanovsky, Franz Atomistic modeling in the context of the bias temperature instabilityThesis Hochschulschrift 2013
15Goes, Wolfgang ; Schanovsky, Franz ; Grasser, Tibor Advanced Modeling of Oxide DefectsBuchbeitrag Book Contribution2013
16Schanovsky, Franz ; Grasser, Tibor On the Microscopic Limit of the RD ModelBuchbeitrag Book Contribution2013
17Schanovsky, F. ; Goes, W. ; Grasser, T. Advanced modeling of charge trapping at oxide defectsKonferenzbeitrag Inproceedings2013
18Schanovsky, F. ; Baumgartner, O. ; Goes, W. ; Grasser, T. A detailed evaluation of model defects as candidates for the bias temperature instabilityKonferenzbeitrag Inproceedings2013
19Baumgartner, O. ; Bina, M. ; Goes, W. ; Schanovsky, F. ; Toledano-Luque, M. ; Kaczer, B. ; Kosina, H. ; Grasser, T. Direct tunneling and gate current fluctuationsKonferenzbeitrag Inproceedings2013
20Schanovsky, F. ; Baumgartner, O. ; Sverdlov, V. ; Grasser, T. A Multi Scale Modeling Approach to Non-Radiative Multi Phonon Transitions at Oxide Defects in MOS StructuresArtikel Article2012