Full name Familienname, Vorname
Lalinsky, T.
 

Results 1-6 of 6 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Cico, Karol ; Gregusova, Dagmar ; Kuzmik, Jan ; di Forte Poisson, Marie-Antoinette ; Lalinsky, T. ; Pogany, Dionyz ; Delage, S.L. ; Fröhlich, Karol InAlN/GaN MOSHEMT with Al2O3 insulating filmKonferenzbeitrag Inproceedings2008
2Cico, Karol ; Kuzmik, Jan ; Gregusova, Dagmar ; Stoklas, R ; Lalinsky, T. ; Georgakilas, A ; Pogany, Dionyz ; Fröhlich, Karol Optimization and performance of Al₂O₃/GaN metal-oxide-semiconductor structuresArtikel Article2007
3Drzik, M. ; Löschner, Hans ; Haugeneder, E. ; Fallmann, Wolfgang ; Hudek, Peter ; Rangelow, E. ; Sarov, Y. ; Lalinsky, T. ; Chlpik, J. Mechanical characterization of membrane like microelectronic componentsArtikel Article2006
4Cico, Karol ; Kuzmik, Jan ; Gregusova, Dagmar ; Lalinsky, T. ; Pogany, Dionyz ; Fröhlich, Karol Optimization and performance of Al2O3/GaN metal-oxide-semiconductor structuresKonferenzbeitrag Inproceedings2006
5Cico, Karol ; Kuzmik, Jan ; Gregusova, Dagmar ; Lalinsky, T. ; Georgakilas, A ; Pogany, Dionyz ; Fröhlich, Karol Rapid thermal annealing and performance of Al2O3/GaN metal-oxide-semiconductor structuresKonferenzbeitrag Inproceedings2006
6Pogany, Dionyz ; Kuzmik, Jan ; Darmo, Juraj ; Litzenberger, Martin ; Bychikhin, Sergey ; Unterrainer, Karl ; Gornik, Erich ; Mozolova, Z. ; Hascik, S. ; Lalinsky, T. Electrical fied mapping in InGaPHEMTs and GaAs teraherz emitters using backside infrared OBIC techniquePräsentation Presentation2002