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Record link: 
http://hdl.handle.net/20.500.12708/69328
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Title: 
Rapid thermal annealing and performance of Al2O3/GaN metal-oxide-semiconductor structures
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Citation: 
Cico, K., Kuzmik, J., Gregusova, D., Lalinsky, T., Georgakilas, A., Pogany, D., & Fröhlich, K. (2006). Rapid thermal annealing and performance of Al2O3/GaN metal-oxide-semiconductor structures. In Conference Proceedings of the sixth International Conference on Advanced Semiconductor Devices and Microsystems (pp. 197–200). http://hdl.handle.net/20.500.12708/69328
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Publication Type: 
Inproceedings - Poster Contribution
en
Authors: 
Cico, Karol 
Kuzmik, Jan 
Gregusova, Dagmar 
Lalinsky, T. 
Georgakilas, A 
Pogany, Dionyz 
Fröhlich, Karol 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Published in: 
Conference Proceedings of the sixth International Conference on Advanced Semiconductor Devices and Microsystems 
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Date (published): 
2006
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Event name: 
International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) 
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Event date: 
16-Oct-2006 - 18-Oct-2006
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Event place: 
Smolenice Castle, Slovakia, EU
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Number of Pages: 
4
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Peer reviewed: 
No
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Science Branch: 
Elektrotechnik, Elektronik
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Appears in Collections:
Conference Paper

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