International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)

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Description

Event name
International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)
 
Start date
16-10-2006
End date
18-10-2006
 
Location
Smolenice Castle, Slovakia
Country
 
Event format Veranstaltungsformat
On Site

Publications Publikationen

Results 1-5 of 5 (Search time: 0.002 seconds).

PreviewAuthors / EditorsTitleTypeIssue Date
1Molnar, Marian ; Donnarumma, Gesualdo ; Palankovski, Vassil ; Kuzmik, Jan ; Donoval, Daniel ; Kovac, Jaroslav ; Selberherr, Siegfried Electrothermal analysis of In<inf>0.12</inf>Al<inf>0.88</inf>N/GaN HEMTsKonferenzbeitrag Inproceedings2012
2Cico, Karol ; Gregusova, Dagmar ; Kuzmik, Jan ; di Forte Poisson, Marie-Antoinette ; Lalinsky, T. ; Pogany, Dionyz ; Delage, S.L. ; Fröhlich, Karol InAlN/GaN MOSHEMT with Al2O3 insulating filmKonferenzbeitrag Inproceedings2008
3Maric, A. ; Radosavljevic, G. ; Zivanov, M. ; Zivanov, Ljiljana ; Stojanovic, G. ; Mayer, M. ; Jachimowicz, Artur ; Keplinger, Franz Modelling and Characterisation of Fractal Based RF Inductors on Silicon SubstrateKonferenzbeitrag Inproceedings2008
4Cico, Karol ; Kuzmik, Jan ; Gregusova, Dagmar ; Lalinsky, T. ; Georgakilas, A ; Pogany, Dionyz ; Fröhlich, Karol Rapid thermal annealing and performance of Al2O3/GaN metal-oxide-semiconductor structuresKonferenzbeitrag Inproceedings2006
5Kuzmik, Jan ; Ostermaier, Clemens ; Pozzovivo, Gianmauro ; Basnar, Bernhard ; Schrenk, Werner ; Carlin, Jean-François ; Gonschorek, Marcus ; Feltin, Eric ; Grandjean, Nicolas ; Douvry, Yannick ; Gaquière, Christophe ; De Jaeger, Jean-Claude ; Strasser, Gottfried ; Pogany, Dionyz ; Gornik, Erich Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTsKonferenzbeitrag Inproceedings2010