| Preview | Authors / Editors | Title | Type | Issue Date |
| 1 | | Ostermaier, Clemens ; Pozzovivo, Gianmauro ; Carlin, Jean-François ; Basnar, Bernhard ; Schrenk, Werner ; Douvry, Yannick ; Gaquière, Christophe ; De Jaeger, Jean-Claude ; Gonschorek, Marcus ; Feltin, Eric ; Grandjean, Nicolas ; Strasser, Gottfried ; Pogany, Dionyz ; Gornik, Erich ; Kuzmik, Jan | Ultrathin 2 nm Barrier HEMT for state-of-the-art fT.LG product of 16.9 GHz.µm | Konferenzbeitrag Inproceedings | 2010 |
| 2 | | Ostermaier, Clemens ; Pozzovivo, Gianmauro ; Carlin, Jean-François ; Basnar, Bernhard ; Schrenk, Werner ; Cico, Karol ; Fröhlich, Karol ; Gonschorek, Marcus ; Grandjean, Nicolas ; Strasser, Gottfried ; Pogany, Dionyz ; Kuzmik, Jan | Thermally Stable InAIN/GaN Enhancement-Mode HEMTs with highly doped GaN Cap | Konferenzbeitrag Inproceedings | 2009 |
| 3 | | Kuzmik, Jan ; Pozzovivo, Gianmauro ; Cico, Karol ; Golka, Sebastian ; Schrenk, Werner ; Carlin, Jean-François ; Gonschorek, Marcus ; Grandjean, Nicolas ; Fröhlich, Karol ; Strasser, Gottfried ; Pogany, Dionyz | Technology and performance of Al2O3/InAlN/AlN/GaN MOS HEMTs | Konferenzbeitrag Inproceedings | 2007 |
| 4 | | Vitanov, Stanislav ; Palankovski, Vassil ; Pozzovivo, Gianmauro ; Kuzmik, Jan ; Quay, Rüdiger | Systematical Study of InAlN/GaN Devices by Numerical Simulation | Konferenzbeitrag Inproceedings | 2008 |
| 5 | | Kuzmik, Jan ; Ostermaier, Clemens ; Pozzovivo, Gianmauro ; Basnar, Bernhard ; Schrenk, Werner ; Carlin, Jean-François ; Gonschorek, Marcus ; Feltin, Eric ; Grandjean, Nicolas ; Douvry, Yannick ; Gaquière, Christophe ; De Jaeger, Jean-Claude ; Strasser, Gottfried ; Pogany, Dionyz ; Gornik, Erich | Role of the gate-to-drain distance in the performance of the normally-off InAlN/GaN HEMTs | Konferenzbeitrag Inproceedings | 2010 |
| 6 | | Pozzovivo, Gianmauro ; Kuzmik, Jan ; Schrenk, Werner ; Carlin, Jean-François ; Gonschorek, Marcus ; Grandjean, Nicolas ; di Forte Poisson, Marie-Antoinette ; Delage, S.L. ; Strasser, Gottfried ; Pogany, Dionyz | Optimization of the plasma etching in fabrication of InAlN/AlN/GaN HEMTs | Konferenzbeitrag Inproceedings | 2007 |
| 7 | | Kuzmik, Jan ; Pozzovivo, Gianmauro ; Carlin, Jean-François ; Gonschorek, Marcus ; Feltin, Eric ; Grandjean, Nicolas ; Strasser, Gottfried ; Pogany, Dionyz | Off-state breakdown in InAlN/GaN HEMTs | Konferenzbeitrag Inproceedings | 2008 |
| 8 | | Pozzovivo, Gianmauro | Nitride-based Intersubband device: An overview of the fabrication and its impact on the performance | Konferenzbeitrag Inproceedings | 2008 |
| 9 | | Alexewicz, Alexander ; Ostermaier, Clemens ; Pozzovivo, Gianmauro ; Schrenk, Werner ; Schmid, M. ; Toth, L. ; Pecz, B ; Carlin, Jean-François ; Gonschorek, Marcus ; Grandjean, Nicolas ; Kuzmik, Jan ; Pogany, Dionyz ; Strasser, Gottfried | Microstructural and Electrical Analyses of Oxygen Diffusion into Iridium Metal Gates | Konferenzbeitrag Inproceedings | 2010 |
| 10 | | Pozzovivo, Gianmauro ; Kuzmik, Jan ; Liday, J. ; Giesen, C. ; Heuken, M ; Strasser, Gottfried ; Pogany, Dionyz | Low resistance ohmic contacts annealed at 600 C on InAlN/GaN heterostructure with SiCl4 reactive ion etching treatment | Konferenzbeitrag Inproceedings | 2008 |
| 11 | | Bychikhin, Sergey ; Ferreyra, R ; Ostermaier, Clemens ; Pozzovivo, Gianmauro ; Kuzmik, Jan ; Coquelin, Michael ; Alomari, M ; Kohn, Erhard ; di Forte-Poisson, M.-A. ; Delage, S.L. ; Strasser, Gottfried ; Pogany, Dionyz | Investigation of nanosecond-time-scale dynamics of electric field distribution and breakdown phenomena in InAlN/GaN TLM structures | Konferenzbeitrag Inproceedings | 2009 |
| 12 | | Pozzovivo, Gianmauro ; Kuzmik, Jan ; Golka, Sebastian ; Cico, Karol ; Fröhlich, Karol ; Carlin, Jean-François ; Gonschorek, Marcus ; Grandjean, Nicolas ; Schrenk, Werner ; Strasser, Gottfried ; Pogany, Dionyz | Influence of GaN capping on performance of InAlN/AlN/GaN MOS-HEMTs with Al2O3 gate insulation prepared by CVD | Konferenzbeitrag Inproceedings | 2007 |
| 13 | | Kohn, Erhard ; Alomari, M ; Denisenko, A ; Dipalo, M ; Maier, D ; Medjdoub, F ; Pietzka, C ; Delage, S.L. ; diForte-Poisson, M.-A. ; Morvan, Erwin ; Sarazin, N ; Jacquet, J.-C. ; Dua, C ; Carlin, Jean-François ; Grandjean, Nicolas ; Py, M.A. ; Gonschorek, Marcus ; Kuzmik, Jan ; Pogany, Dionyz ; Pozzovivo, Gianmauro ; Ostermaier, Clemens ; Toth, L. ; Pecz, B ; Gaquière, Christophe ; Cico, Karol ; Fröhlich, Karol ; Georgakilas, A ; Iliopoulos, E ; Konstantinidis, G. ; Giessen, C ; Heuken, M ; Schineller, B | InAlN/GaN Heterostructures for Microwave Power and Beyond | Konferenzbeitrag Inproceedings | 2009 |
| 14 | | Kuzmik, Jan ; Pozzovivo, Gianmauro ; Ostermaier, Clemens ; Carlin, Jean-François ; Gonschorek, Marcus ; Feltin, Eric ; Grandjean, Nicolas ; Strasser, Gottfried ; Pogany, Dionyz | InAlN/GaN HEMTs: a new perspective in degradation limits of III-N HEMTs? | Konferenzbeitrag Inproceedings | 2009 |
| 15 | | Ostermaier, Clemens ; Kuzmik, Jan ; Carlin, Jean-François ; Pozzovivo, Gianmauro ; Basnar, Bernhard ; Schrenk, Werner ; Cico, Karol ; Fröhlich, Karol ; Gonschorek, Marcus ; Grandjean, Nicolas ; Strasser, Gottfried ; Pogany, Dionyz | High Performance normally-on and normally-off n++ GaN/InAlN/GaN HEMTs | Konferenzbeitrag Inproceedings | 2009 |
| 16 | | Kuzmik, Jan ; Carlin, J.-F ; Kostopoulos, Anasthassios ; Konstantinidis, G. ; Pozzovivo, Gianmauro ; Georgakilas, A ; Pogany, Dionyz | Gate-lag and drain-lag effects in InAlN/GaN and GaN/InAlN/GaN HEMTs | Konferenzbeitrag Inproceedings | 2006 |
| 17 | | Kuzmik, Jan ; Pozzovivo, Gianmauro ; Abermann, Stephan ; Carlin, Jean-François ; Gonschorek, Marcus ; Cico, Karol ; Fröhlich, Karol ; Grandjean, Nicolas ; Bertagnolli, Emmerich ; Strasser, Gottfried ; Pogany, Dionyz | Gate insulation and current collapse suppression in InAlN/GaN HEMTs using High-k dielectrics | Konferenzbeitrag Inproceedings | 2007 |
| 18 | | Tapajna, Milan ; Cico, Karol ; Kuzmik, Jan ; Pozzovivo, Gianmauro ; Pogany, Dionyz ; Abermann, Stephan ; Bertagnolli, Emmerich ; Carlin, Jean-François ; Grandjean, Nicolas ; Fröhlich, Karol | Evaluation of the interface state Density on Ni/ZrO2/InAlN/GaN MOS contacts | Konferenzbeitrag Inproceedings | 2008 |
| 19 | | Kheirodin, N ; Nevou, L ; Machhadani, H ; Tchernycheva, M ; Lupu, A ; Julien, F.H. ; Crozat, P ; Meignien, L ; Warde, E ; Vivien, L ; Pozzovivo, Gianmauro ; Golka, Sebastian ; Strasser, Gottfried ; Guillot, G. ; Monroy, Eva ; Remmele, T ; Albrecht, M | Electro-optical intersubband modulators at telecommunication wavelengths based on GaN/AlN quantum wells | Konferenzbeitrag Inproceedings | 2007 |
| 20 | | Golka, Sebastian ; Pozzovivo, Gianmauro ; Schrenk, Werner ; Strasser, Gottfried ; Skierbiszewski, C ; Siekacz, M ; Grzegory, I ; Porowski, S ; Riedling, Karl | Dislocation-Free GaN/AlGaN Double-Barrier Diodes Grown on Bulk GaN | Konferenzbeitrag Inproceedings | 2006 |
