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Record link: 
http://hdl.handle.net/20.500.12708/69388
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Title: 
Gate-lag and drain-lag effects in InAlN/GaN and GaN/InAlN/GaN HEMTs
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Citation: 
Kuzmik, J., Carlin, J.-F., Kostopoulos, A., Konstantinidis, G., Pozzovivo, G., Georgakilas, A., & Pogany, D. (2006). Gate-lag and drain-lag effects in InAlN/GaN and GaN/InAlN/GaN HEMTs. In Technical Digest (p. 302). http://hdl.handle.net/20.500.12708/69388
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Publication Type: 
Inproceedings - Poster Contribution
en
Authors: 
Kuzmik, Jan 
Carlin, J.-F 
Kostopoulos, Anasthassios 
Konstantinidis, G. 
Pozzovivo, Gianmauro 
Georgakilas, A 
Pogany, Dionyz 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Published in: 
Technical Digest 
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Date (published): 
2006
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Event name: 
International Workshop on Nitride Semiconductors 2006 
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Event date: 
22-Oct-2006 - 27-Oct-2006
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Event place: 
Kyoto, Japan, Non-EU
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Number of Pages: 
1
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Peer reviewed: 
No
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Science Branch: 
Elektrotechnik, Elektronik
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Appears in Collections:
Conference Paper

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