| Preview | Authors / Editors | Title | Type | Issue Date |
| 1 | | Osintsev, D. ; Sverdlov, V. ; Stanojevic, Z. ; Makarov, A. ; Selberherr, S. | Transport properties of spin field-effect transistors built on Si and InAs | Konferenzbeitrag Inproceedings | 2011 |
| 2 | | Stanojevic, Z. ; Kosina, H. | Surface-roughness-scattering in non-planar channels — The role of band anisotropy | Konferenzbeitrag Inproceedings | 2013 |
| 3 | | Stanojevic, Z. ; Baumgartner, O. ; Karner, M. ; Filipovic, L. ; Kernstock, C. ; Kosina, H. | On the validity of momentum relaxation time in low-dimensional carrier gases | Konferenzbeitrag Inproceedings | 2014 |
| 4 | | Kernstock, C. ; Stanojevic, Z. ; Baumgartner, O. ; Karner, M. | Layout-based TCAD device model generation | Konferenzbeitrag Inproceedings | 2015 |
| 5 | | Baumgartner, O. ; Stanojevic, Z. ; Filipovic, L. ; Grill, A. ; Grasser, T. ; Kosina, H. ; Karner, M. | Investigation of quantum transport in nanoscaled GaN high electron mobility transistors | Konferenzbeitrag Inproceedings | 2014 |
| 6 | | Demel, H. ; Stanojevic, Z. ; Karner, M. ; Rzepa, G. ; Grasser, T. | Expanding TCAD simulations from grid to cloud | Konferenzbeitrag Inproceedings | 2015 |
| 7 | | Stanojevic, Z. ; Baumgartner, O. ; Sverdlov, V. ; Kosina, H. | Electronic band structure modeling in strained Si-nanowires: Two band k · p versus tight binding | Konferenzbeitrag Inproceedings | 2010 |
| 8 | | Baumgartner, O. ; Filipovic, La. ; Kosina, H. ; Karner, M. ; Stanojevic, Z. ; Cheng-Karner, H.W. | Efficient modeling of source/drain tunneling in ultra-scaled transistors | Konferenzbeitrag Inproceedings | 2015 |
| 9 | | Stanojevic, Z. ; Karner, M. ; Schnass, K. ; Kernstock, C. ; Baumgartner, O. ; Kosina, H. | A versatile finite volume simulator for the analysis of electronic properties of nanostructures | Konferenzbeitrag Inproceedings | 2011 |
