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Full name Familienname, Vorname
Molnar, Marian
 
Main Affiliation Organisations­zuordnung
 

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Results 1-7 of 7 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Kuzmík, J. ; Ťapajna, Milan ; Válik, Lukas ; Molnar, Marian ; Donoval, D ; Fleury, Clement ; Pogany, Dionyz ; Strasser, Gottfried ; Hilt, O ; Brunner, Frank ; Würfl, Joachim Self-Heating in GaN Transistors Designed for High-Power OperationArtikel Article Oct-2014
2Molnár, M. ; Donoval, D. ; Kuzmík, J. ; Marek, J. ; Chvála, A. ; Príbytný, P. ; Mikolášek, M. ; Rendek, K. ; Palankovski, V. Simulation study of interface traps and bulk traps in n⁺⁺GaN/InAlN/AlN/GaN high electron mobility transistorsArtikel Article 1-Sep-2014
3Molnar, Marian ; Palankovski, Vassil ; Donoval, D ; Kuzmik, J. ; Kovac, J ; Chvala, A ; Marek, J ; Pribytny, P. ; Selberherr, Siegfried Modeling and Characterization of InAlN/GaN HEMTs at Elevated TemperaturesKonferenzbeitrag Inproceedings2013
4Molnar, Marian ; Palankovski, Vassil ; Donoval, D ; Kuzmik, J. ; Kovac, J ; Chvala, A ; Marek, J ; Pribytny, P. ; Selberherr, Siegfried Characterization of InAlN/GaN HEMTs at Elevated Temperatures Supported by Numerical SimulationKonferenzbeitrag Inproceedings2013
5Molnar, Marian ; Donnarumma, Gesualdo ; Palankovski, Vassil ; Kuzmik, Jan ; Donoval, Daniel ; Kovac, Jaroslav ; Selberherr, Siegfried Electrothermal analysis of In<inf>0.12</inf>Al<inf>0.88</inf>N/GaN HEMTsKonferenzbeitrag Inproceedings2012
6Molnar, Marian ; Donnarumma, Gesualdo ; Palankovski, Vassil ; Kuzmik, J. ; Donoval, D ; Kovac, J ; Selberherr, Siegfried Characterization, Modeling and Simulation of In0.12Al0.88N/GaN HEMTsKonferenzbeitrag Inproceedings 2012
7Jurkovic, M ; Gregusova, Dagmar ; Hascik, S. ; Blaho, M. ; Molnar, Marian ; Palankovski, Vassil ; Donoval, D ; Carlin, J.-F ; Grandjean, Nicolas ; Kuzmik, J. GaN/InAlN/AlN/GaN Normally-Off HEMT with Etched Access RegionKonferenzbeitrag Inproceedings2012