Record link: 
http://hdl.handle.net/20.500.12708/156977
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Title: 
Self-Heating in GaN Transistors Designed for High-Power Operation
en
Citation: 
Kuzmík, J., Ťapajna, M., Válik, L., Molnar, M., Donoval, D., Fleury, C., Pogany, D., Strasser, G., Hilt, O., Brunner, F., & Würfl, J. (2014). Self-Heating in GaN Transistors Designed for High-Power Operation. IEEE Transactions on Electron Devices, 61(10), 3429–3434. https://doi.org/10.1109/ted.2014.2350516
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Publisher DOI: 
10.1109/ted.2014.2350516
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Publication Type: 
Article - Original Research Article
en
Language: 
English
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Authors: 
Kuzmík, J. 
Ťapajna, Milan 
Válik, Lukas 
Molnar, Marian 
Donoval, D 
Fleury, Clement 
Pogany, Dionyz 
Strasser, Gottfried 
Hilt, O 
Brunner, Frank 
Würfl, Joachim 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
E362 - Institut für Festkörperelektronik 
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Journal: 
IEEE Transactions on Electron Devices 
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ISSN: 
0018-9383
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Date (published): 
Oct-2014
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Number of Pages: 
6
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Publisher: 
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
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Peer reviewed: 
Yes
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Keywords: 
Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials
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Research Areas: 
Surfaces and Interfaces: 50%
Materials Characterization: 20%
Special and Engineering Materials: 30%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
Physik, Astronomie
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