Record link: 
http://hdl.handle.net/20.500.12708/156906
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Title: 
Simulation study of interface traps and bulk traps in n⁺⁺GaN/InAlN/AlN/GaN high electron mobility transistors
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Citation: 
Molnár, M., Donoval, D., Kuzmík, J., Marek, J., Chvála, A., Príbytný, P., Mikolášek, M., Rendek, K., & Palankovski, V. (2014). Simulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors. Applied Surface Science, 312, 157–161. https://doi.org/10.1016/j.apsusc.2014.04.078
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Publisher DOI: 
10.1016/j.apsusc.2014.04.078
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Publication Type: 
Article - Original Research Article
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Language: 
English
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Authors: 
Molnár, M. 
Donoval, D. 
Kuzmík, J. 
Marek, J. 
Chvála, A. 
Príbytný, P. 
Mikolášek, M. 
Rendek, K. 
Palankovski, V. 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
E191-01 - Forschungsbereich Cyber-Physical Systems 
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Journal: 
Applied Surface Science 
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ISSN: 
0169-4332
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Date (published): 
1-Sep-2014
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Number of Pages: 
5
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Peer reviewed: 
Yes
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Keywords: 
Condensed Matter Physics; General Physics and Astronomy; General Chemistry; Surfaces, Coatings and Films; Surfaces and Interfaces
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Research Areas: 
Computer Science Foundations: 50%
Computational Materials Science: 50%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
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