<div class="csl-bib-body">
<div class="csl-entry">Molnár, M., Donoval, D., Kuzmík, J., Marek, J., Chvála, A., Príbytný, P., Mikolášek, M., Rendek, K., & Palankovski, V. (2014). Simulation study of interface traps and bulk traps in n<sup>+</sup><sup>+</sup>GaN/InAlN/AlN/GaN high electron mobility transistors. <i>Applied Surface Science</i>, <i>312</i>, 157–161. https://doi.org/10.1016/j.apsusc.2014.04.078</div>
</div>
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dc.identifier.issn
0169-4332
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dc.identifier.uri
http://hdl.handle.net/20.500.12708/156906
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dc.language.iso
en
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dc.relation.ispartof
Applied Surface Science
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dc.subject
Condensed Matter Physics
en
dc.subject
General Physics and Astronomy
en
dc.subject
General Chemistry
en
dc.subject
Surfaces, Coatings and Films
en
dc.subject
Surfaces and Interfaces
en
dc.title
Simulation study of interface traps and bulk traps in n⁺⁺GaN/InAlN/AlN/GaN high electron mobility transistors
en
dc.type
Artikel
de
dc.type
Article
en
dc.description.startpage
157
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dc.description.endpage
161
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dc.type.category
Original Research Article
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tuw.container.volume
312
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tuw.journal.peerreviewed
true
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tuw.peerreviewed
true
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wb.publication.intCoWork
International Co-publication
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C5
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C1
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Computer Science Foundations
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tuw.researchTopic.name
Computational Materials Science
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tuw.researchTopic.value
50
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tuw.researchTopic.value
50
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dcterms.isPartOf.title
Applied Surface Science
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tuw.publication.orgunit
E360 - Institut für Mikroelektronik
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tuw.publication.orgunit
E191-01 - Forschungsbereich Cyber-Physical Systems
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tuw.publisher.doi
10.1016/j.apsusc.2014.04.078
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dc.date.onlinefirst
2014-04-21
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dc.identifier.eissn
1873-5584
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dc.description.numberOfPages
5
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Elektrotechnik, Elektronik, Informationstechnik
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2020
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Mikro- und Nanoelektronik
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Micro- and Nanoelectronics
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E350
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Publications
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research article
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restricted
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E360 - Institut für Mikroelektronik
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E362 - Institut für Festkörperelektronik
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E182 - Institut für Technische Informatik
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E360 - Institut für Mikroelektronik
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E350 - Fakultät für Elektrotechnik und Informationstechnik
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E350 - Fakultät für Elektrotechnik und Informationstechnik
