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Vexler, M. I.
 

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PreviewAuthor(s)TitleTypeIssue Date
1Illarionov, Yury ; Banshchikov, A. G. ; Sokolov, N. S. ; Fedorov, V. V. ; Suturin, S. M. ; Vexler, M. I. ; Knobloch, Theresia ; Polyushkin, Dmitry K. ; Mueller, T. ; Grasser, Tibor Epitaxial Fluorides as a Universal Platform for More Moore and More than Moore Electronics Based on 2D MaterialsPräsentation Presentation2021
2Illarionov, Yury ; Banshchikov, A. G. ; Knobloch, Theresia ; Polyushkin, Dmitry K. ; Wachter, Stefan ; Fedorov, V. V. ; Suturin, S. M. ; Stöger-Pollach, Michael ; Vexler, M. I. ; Sokolov, N. S. ; Grasser, Tibor Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D ElectronicsKonferenzbeitrag Inproceedings 2020
3Illarionov, Yury ; Banshchikov, A. G. ; Polyushkin, Dmitry K. ; Wachter, Stefan ; Vexler, M. I. ; Sokolov, N. S. ; Müller, Thomas ; Grasser, Tibor Reliability and Thermal Stability of MoS2 FETs with Ultrathin CaF2 InsulatorPräsentation Presentation2019
4Banshchikov, A. G. ; Illarionov, Yu. Yu. ; Vexler, M. I. ; Wachter, S. ; Sokolov, N. S. Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide LayerArtikel Article 2019
5Tyaginov, S. E. ; Makarov, A. A. ; Jech, M. ; Vexler, M. I. ; Franco, J. ; Kaczer, B. ; Grasser, T. Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor StructuresArtikel Article 2018
6Tyaginov, S. E. ; Makarov, A. A. ; Kaczer, B. ; Jech, M. ; Chasin, A. ; Grill, A. ; Hellings, G. ; Vexler, M. I. ; Linten, D. ; Grasser, T. Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETsArtikel Article 2018
7Illarionov, Yu. Yu. ; Banshchikov, A. G. ; Sokolov, N. S. ; Wachter, S. ; Vexler, M. I. Nonmonotonic Change in the Tunnel Conductivity of an MIS Structure with a Two-Layer Insulator with an Increase in Its Thickness (by the Example of the Metal/SiO2/CaF2/Si System)Artikel Article 2018
8Makarov, A. A. ; Tyaginov, S. E. ; Kaczer, B. ; Jech, M. ; Chasin, A. ; Grill, A. ; Hellings, G. ; Vexler, M. I. ; Linten, D. ; Grasser, T. Analysis of the Features of Hot-Carrier Degradation in FinFETsArtikel Article 2018
9Makarov, A. ; Tyaginov, S. E. ; Kaczer, B. ; Jech, M. ; Chasin, A. ; Grill, A. ; Hellings, G. ; Vexler, M. I. ; Linten, D. ; Grasser, T. Hot-carrier degradation in FinFETs: Modeling, peculiarities, and impact of device topologyKonferenzbeitrag Inproceedings 2017
10Vexler, M. I. ; Illarionov, Yu. Yu. ; Grekhov, I. V. Quantum-Well Charge and Voltage Distribution in a Metal-Insulator-Semiconductor Structure upon Resonant Electron TunnelingArtikel Article 2017
11Vexler, M. I. ; Kareva, G. G. ; Illarionov, Yu. Yu. ; Grekhov, I. V. Resonant Electron Tunneling and Related Charging Phenomena in Metal-Oxide-p+-Si NanostructuresArtikel Article 2016
12Vexler, M. I. ; Illarionov, Yu. Yu. ; Tyaginov, S. E. ; Grasser, T. Adaptation of the Model of Tunneling in a Metal/CaF2/Si(111) System for Use in Industrial Simulators of MIS DevicesArtikel Article 2015
13Tyaginov, S. E. ; Illarionov, Yu. Yu. ; Vexler, M. I. ; Bina, M. ; Cervenka, J. ; Franco, J. ; Kaczer, B. ; Grasser, T. Modeling of Deep-Submicron Silicon-Based MISFETs with Calcium Fluoride DielectricArtikel Article2014
14Illarionov, Yu. Yu. ; Vexler, M. I. ; Fedorov, V. V. ; Suturin, S. M. ; Sokolov, N. S. Electrical and Optical Characterization of Au/CaF₂/p-Si(111) Tunnel-Injection DiodesArtikel Article2014
15Kareva, G.G. ; Vexler, M. I. ; Illarionov, Yury Transformation of a Metal-Insulator-Silicon Structure into a Resonant-Tunneling DiodeKonferenzbeitrag Inproceedings 2013
16Illarionov, Yury ; Vexler, M. I. ; Fedorov, V. V. ; Suturin, S. M. ; Isakov, D. V. ; Grekhov, I.V. Optical characterization of the injection properties of MIS structures with thin CaF2 and HfO2/SiO2 insulating layers on SiliconKonferenzbeitrag Inproceedings2013
17Tyaginov, S. E. ; Osintsev, Dimitry ; Illarionov, Yury ; Park, J.M. ; Enichlmair, H. ; Vexler, M. I. ; Grasser, Tibor Tunnelling of strongly non-equilibrium carriers in the transistors of traditional configurationKonferenzbeitrag Inproceedings2013
18Vexler, M. I. ; Illarionov, Yury ; Suturin, S. M. ; Fedorov, V. V. ; Sokolov, N. S. Tunnel charge transport in Au/CaF2/Si(111) systemKonferenzbeitrag Inproceedings2013
19Vexler, M. I. ; Tyaginov, S. E. ; Illarionov, Yu. Yu. ; Sing, Yew Kwang ; Shenp, Ang Diing ; Fedorov, V. V. ; Isakov, D. V. A General Simulation Procedure for the Electrical Characteristics of Metal Insulator Semiconductor Tunnel StructuresArtikel Article2013
20Vexler, M. I. ; Sokolov, N. S. ; Suturin, S. M. ; Banshchikov, A. G. ; Tyaginov, S. E. ; Grasser, T. Electrical Characterization and Modeling of the Au/CaF₂/nSi(111) Sructures with High-Quality Tunnel-Thin Fluoride LayerArtikel Article2009