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Full name Familienname, Vorname
Derluyn, Joff
 

Own Publications Eigene Publikationen

Results 1-10 of 10 (Search time: 0.001 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Fleury, Clement ; Capriotti, M ; Rigato, Matteo ; Hilt, O ; Würfl, Joachim ; Derluyn, Joff ; Strasser, Gottfried ; Pogany, Dionyz Vertical breakdown in AlGaN/GaN high electron mobility transistorsPräsentation Presentation2015
2Fleury, Clément ; Capriotti, Mattia ; Rigato, Matteo ; Hilt, Oliver ; Würfl, Joachim ; Derluyn, Joff ; Steinhauer, Stephan ; Köck, Anton ; Strasser, Gottfried ; Pogany, Dionyz High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applicationsArtikel Article 2015
3Fleury, Clement ; Capriotti, M ; Rigato, Matteo ; Hilt, O ; Würfl, Joachim ; Derluyn, Joff ; Steinhauer, S. ; Köck, Anton ; Strasser, Gottfried ; Pogany, Dionyz High temperature performances of normally-off p-GaN gate AlGaN/GaN HEMTs on SiC and Si substrates for power applicationsPräsentation Presentation2015
4Capriotti, M ; Alexewicz, Alexander ; Fleury, Clement ; Derluyn, Joff ; Visalli, Domenica ; Pogany, Dionyz ; Strasser, Gottfried Different layer designs for normally-off GaN HEMTs with ultrathin AlN barrier, GaN cap and in situ SiN passivationPräsentation Presentation2014
5Fleury, Clement ; Bychikhin, Sergey ; Cappriotti, Mattia ; Hilt, O ; Zhytnytska, Rimma ; Würfl, Joachim ; Derluyn, Joff ; Visalli, Domenica ; Strasser, Gottfried ; Pogany, Dionyz Localization Of Vertical Breakdown Spots In Normally-Off And Normally-On Algan/gan Hemts On Sic And Si SubstratesKonferenzbeitrag Inproceedings2013
6Capriotti, M ; Alexewicz, Alexander ; Bethge, Ole ; Visalli, Domenica ; Derluyn, Joff ; Fleury, Clement ; Bertagnolli, Emmerich ; Pogany, Dionyz ; Strasser, Gottfried AlGaN/GaN MOSHEMTS with selective removal of In-Situ Grown SiN PassivationKonferenzbeitrag Inproceedings2013
7Fleury, Clément ; Zhytnytska, Rimma ; Bychikhin, Sergey ; Cappriotti, Mattia ; Hilt, Oliver ; Visalli, Domenica ; Meneghesso, Gaudenzio ; Zanoni, Enrico ; Würfl, Joachim ; Derluyn, Joff ; Strasser, Gottfried ; Pogany, Dionyz Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applicationsArtikel Article2013
8Alexewicz, Alexander ; Capriotti, M ; Bethge, Ole ; Visalli, Domenica ; Derluyn, Joff ; Pogany, Dionyz ; Bertagnolli, Emmerich ; Strasser, Gottfried Normally-off GaN MOSHEMTs with thin barrier on Si substratePräsentation Presentation2013
9Fleury, Clement ; Zhytnytska, Rimma ; Bychikhin, Sergey ; Cappriotti, Mattia ; Hilt, O ; Visalli, Domenica ; Meneghesso, Gaudenzio ; Zanoni, Enrico ; Würfl, Joachim ; Derluyn, Joff ; Strasser, Gottfried ; Pogany, Dionyz Statistics and localisation of vertical breakdown in AlGaN/GaN HEMTs on SiC and Si substrates for power applicationsPräsentation Presentation2013
10Capriotti, M ; Alexewicz, Alexander ; Bethge, Ole ; Visalli, Domenica ; Derluyn, Joff ; Fleury, Clement ; Bertagnolli, Emmerich ; Pogany, Dionyz ; Strasser, Gottfried Role of In-Situ Grown SiN Passivation for E-Mode AlGaN/GaN MOSHEMTS on silicon substrate for efficient power convertersPräsentation Presentation2013