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Record link: 
http://hdl.handle.net/20.500.12708/73670
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Title: 
Localization Of Vertical Breakdown Spots In Normally-Off And Normally-On Algan/gan Hemts On Sic And Si Substrates
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Citation: 
Fleury, C., Bychikhin, S., Cappriotti, M., Hilt, O., Zhytnytska, R., Würfl, J., Derluyn, J., Visalli, D., Strasser, G., & Pogany, D. (2013). Localization Of Vertical Breakdown Spots In Normally-Off And Normally-On Algan/gan Hemts On Sic And Si Substrates. In WOCSDICE 2013 (pp. 159–160). http://hdl.handle.net/20.500.12708/73670
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Publication Type: 
Inproceedings - Full-Paper Contribution
en
Authors: 
Fleury, Clement 
Bychikhin, Sergey 
Cappriotti, Mattia 
Hilt, O 
Zhytnytska, Rimma 
Würfl, Joachim 
Derluyn, Joff 
Visalli, Domenica 
Strasser, Gottfried 
Pogany, Dionyz 
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Organisational Unit: 
E362 - Institut für Festkörperelektronik 
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Published in: 
WOCSDICE 2013 
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Date (published): 
2013
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Event name: 
Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE) 
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Event date: 
15-May-2005 - 18-May-2005
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Event place: 
Cardiff, Unided Kingdom, Austria
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Number of Pages: 
2
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Peer reviewed: 
No
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Science Branch: 
Elektrotechnik, Elektronik
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Appears in Collections:
Conference Paper

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