Author
- 4
Pogany, Dionyz
- 3
Fleury, Clement
- 3
Strasser, Gottfried
- 2
Bychikhin, Sergey
- 2
Derluyn, Joff
- 2
Hilt, O
- 2
Visalli, Domenica
- 2
Würfl, Joachim
- 1
Alexewicz, Alexander
- 1
Bertagnolli, Emmerich
- .
next >
Results 1-4 of 4 (Search time: 0.001 seconds).
| Preview | Authors / Editors | Title | Type | Issue Date |
1 | | Capriotti, M ; Alexewicz, Alexander ; Bethge, Ole ; Visalli, Domenica ; Derluyn, Joff ; Fleury, Clement ; Bertagnolli, Emmerich ; Pogany, Dionyz ; Strasser, Gottfried | AlGaN/GaN MOSHEMTS with selective removal of In-Situ Grown SiN Passivation | Konferenzbeitrag Inproceedings | 2013 |
2 | | Fleury, Clement ; Bychikhin, Sergey ; Cappriotti, Mattia ; Hilt, O ; Zhytnytska, Rimma ; Würfl, Joachim ; Derluyn, Joff ; Visalli, Domenica ; Strasser, Gottfried ; Pogany, Dionyz | Localization Of Vertical Breakdown Spots In Normally-Off And Normally-On Algan/gan Hemts On Sic And Si Substrates | Konferenzbeitrag Inproceedings | 2013 |
3 | | Lagger, Peter Willibald ; Schiffmann, Alexander ; Pobegen, Gregor ; Pogany, Dionyz ; Ostermaier, C | New insights on forward Gate Bias induced Threshold Voltage Instabilities of GaN-Based MIS-HEMTS | Konferenzbeitrag Inproceedings | 2013 |
4 | | Fleury, Clement ; Bychikhin, Sergey ; Hilt, O ; Würfl, Joachim ; Strasser, Gottfried ; Pogany, Dionyz | Transient Thermal Mapping Of P-Gan Gate Normally-Off Algan/gan Transistors | Konferenzbeitrag Inproceedings | 2013 |